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| 型号： | NDS0610 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 120MA SOT-23 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 120mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 2.5nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 79pF @ 25V |
| 功率 - 最大： | 360mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | NDS0610DKR |
July 2002
NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These P-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
? ? 0.12A, ? 60V.
R DS(ON) = 10 ? @ V GS = ? 10 V
R DS(ON) = 20 ? @ V GS = ? 4.5 V
density process has been designed to minimize on-
state resistance, provide rugged and reliable
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
120mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
D
S
? Voltage controlled p-channel small signal switch
? High density cell design for low R DS(ON)
? High saturation current
D
G
S
SOT-23
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
? 60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
? 0.12
A
– Pulsed
? 1
P D
Maximum Power Dissipation
Derate Above 25 ° C
(Note 1)
0.36
2.9
W
mW/ ° C
T J , T STG
T L
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
? 55 to +150
300
° C
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
° C/W
Package Marking and Ordering Information
Device Marking
610
Device
NDS0610
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2002 Fairchild Semiconductor Corporation
NDS0610 Rev B(W)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDS0610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| NDS0610_D87Z | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS0610_NL | 功能描述:MOSFET 60V 10 OHM P-CH MOSFETSOT-23 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS0610_Q | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS0610X | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 60V 0.12A SOT23 |
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