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| 型号： | NDS355AN |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.7A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 1.9A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 195pF @ 15V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | NDS355ANDKR |
January 1997
NDS355AN
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOT TM -3 N-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very small
outline surface mount package.
Features
1.7A, 30 V, R DS(ON) = 0.125 ? @ V GS = 4.5 V
R DS(ON) = 0.085 ? @ V GS = 10 V.
Industry standard outline SOT-23 surface mount package
using proprietary SuperSOT TM -3 design for superior
thermal and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
Compact industry standard SOT-23 surface mount
package.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDS355AN
30
±20
Units
V
V
I D
Maximum Drain Current - Continuous
(Note 1a)
1.7
A
- Pulsed
10
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
NDS355AN Rev.C
相关PDF资料 |
PDF描述 |
|---|---|
| NDS355N | MOSFET N-CH 30V 1.6A SSOT3 |
| NDS7002A | MOSFET N-CH 60V 280MA SOT-23 |
| NDS8425 | MOSFET N-CH 20V 7.4A 8SOIC |
| NDS8434 | MOSFET P-CH 20V 6.5A 8-SOIC |
| NDS8947 | MOSFET 2P-CH 30V 4A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDS355AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| NDS355AN | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 30V 1.7A ((NW)) 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 30V, 1.7A, SUPER SOT-3 |
| NDS355AN_G | 制造商:Fairchild Semiconductor Corporation 功能描述:N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3 |
| NDS355AN_Q | 功能描述:MOSFET N-Channel Logic RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS355AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:N-Channel 30 V 0.085 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3 |
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