- 您现在的位置：买卖IC网 > Datasheet目录483 > NDS8425 (Fairchild Semiconductor)MOSFET N-CH 20V 7.4A 8SOIC Datasheet资料下载
参数资料
| 型号： | NDS8425 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 7.4A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 7.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1098pF @ 15V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NDS8425FSDKR |
January 2001
NDS8425
Single N-Channel, 2.5V Specified PowerTrench ? MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
?
7.4 A, 20 V.
R DS(ON) = 0.022 ? @ V GS = 4.5 V
R DS(ON) = 0.028 ? @ V GS = 2.7 V
minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Applications
?
?
?
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low
R DS(ON)
?
?
DC/DC converter
Load switch
?
High power and current handling capability in a widely
used surface mount package
D
D
D
D
5
6
4
3
SO-8
S
S
S
G
7
8
2
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
20
± 8
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
± 7.4
A
– Pulsed
± 20
P D
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
NDS8425
Device
NDS8425
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
? 2001 Fairchild Semiconductor International
NDS8425 Rev D (W)
相关PDF资料 |
PDF描述 |
|---|---|
| NDS8434 | MOSFET P-CH 20V 6.5A 8-SOIC |
| NDS8947 | MOSFET 2P-CH 30V 4A 8-SOIC |
| NDS9400A | MOSFET P-CH 30V 3.4A 8-SOIC |
| NDS9407 | MOSFET P-CH 60V 3A 8-SOIC |
| NDS9945 | MOSFET 2N-CH 60V 3.5A 8-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDS8425 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS8426 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel Enhancement Mode Field Effect Transistor |
| NDS8426A | 功能描述:MOSFET Single N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS8426A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS8433 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。