- 您现在的位置：买卖IC网 > Datasheet目录483 > NDS9400A (Fairchild Semiconductor)MOSFET P-CH 30V 3.4A 8-SOIC Datasheet资料下载
参数资料
| 型号： | NDS9400A |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 3.4A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 Product Discontinuation 27/Feb/2012 |
| 产品目录绘图： | Power MOSFET, 8-SOP, SO-8 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 130 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 2.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | NDS9400ADKR |
February 1996
NDS9400A
Single P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
Features
-3.4A, -30V. R DS(ON) = 0.13 ? @ V GS = -10V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely used
surface mount package.
Rugged and reliable.
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
________________________________________________________________________________
5
6
7
8
4
3
2
1
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDS9400A
-30
± 20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
± 3.4
A
- Pulsed
± 10
P D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Note 1b)
(Note 1c)
1.2
1
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
NDS9400A.SAM
相关PDF资料 |
PDF描述 |
|---|---|
| NDS9407 | MOSFET P-CH 60V 3A 8-SOIC |
| NDS9945 | MOSFET 2N-CH 60V 3.5A 8-SOIC |
| NDS9948 | MOSFET 2P-CH 60V 2.3A 8-SOIC |
| NDS9952A | MOSFET N+P 30V 2.9A 8-SOIC |
| NDT014L | MOSFET N-CH 60V 2.8A SOT-223 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDS9400A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SO-8 |
| NDS9400A_D87Z | 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS9405 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS9405_D84Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS9407 | 功能描述:MOSFET Single P-Ch MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。