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| 型号： | NDS9945 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 60V 3.5A 8-SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 30nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 345pF @ 25V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NDS9945CT |
May 1998
NDS9945
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications
such as disk drive motor control, battery powered circuits
where fast switching, low in-line power loss, and resistance
to transients are needed.
Features
3.5 A, 60 V. R DS(ON) = 0.100 ? @ V GS = 10 V,
R DS(ON) = 0.200 ? @ V GS = 4.5 V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT TM -6
SuperSOT TM -8
SO-8
SOT-223
SOIC-16
ND 45
D1
D1
D2
D2
S
99
5
6
4
3
SO-8
pin 1
S1
G1
S2
G2
7
8
2
1
Absolute Maximum Ratings
T A = 25 o C unless other wise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDS9945
60
±20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
3.5
A
- Pulsed
10
P D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2
1.6
1
0.9
W
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
? 1998 Fairchild Semiconductor Corporation
NDS9945 Rev.B
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PDF描述 |
|---|---|
| NDS9948 | MOSFET 2P-CH 60V 2.3A 8-SOIC |
| NDS9952A | MOSFET N+P 30V 2.9A 8-SOIC |
| NDT014L | MOSFET N-CH 60V 2.8A SOT-223 |
| NDT014 | MOSFET N-CH 60V 2.7A SOT-223-4 |
| NDT2955 | MOSFET P-CH 60V 2.5A SOT-223-4 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR, MOSFET |
| NDS9945 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS9945_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS9947 | 功能描述:MOSFET Dual 20V P-Ch MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS9947_02 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual 20V P-Channel PowerTrench MOSFET |
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