参数资料
型号: NDS9400A
厂商: Fairchild Semiconductor
文件页数: 6/7页
文件大小: 0K
描述: MOSFET P-CH 30V 3.4A 8-SOIC
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品变化通告: Mold Compound Change 12/Dec/2007
Product Discontinuation 27/Feb/2012
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 130 毫欧 @ 1A,10V
Id 时的 Vgs(th)(最大): 2.8V @ 250µA
闸电荷(Qg) @ Vgs: 25nC @ 10V
输入电容 (Ciss) @ Vds: 350pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: NDS9400ADKR
Typical Thermal Characteristics
2.5
2
1.5
1b
1c
1a
5
4
3
1b
1c
1a
T A = 2 5 C
1
4.5"x5" FR-4 Board
o
2
4.5"x5" FR-4 Board
T A = 2 5 o C
Still Air
0.5
0
Still Air
0.2 0.4 0.6 0.8
2oz COPPER MOUNTING PAD AREA (in ) 2
1
1
0
V G S = - 1 0 V
0.2 0.4 0.6 0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
1
Figure 12. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
Figure 13. Maximum Steady- State Drain
Current versus Copper Mounting Pad
Area.
30
10
3
1
RD
S(O
N)
LI
MI
T
10
10
0m
1m
ms
s
s
10
0u
s
1s
θ J A
0.3
0.1
0.03
R
V GS = -10V
SINGLE PULSE
= See Note 1c
T A = 25°C
10
DC
s
0.01
0.1
0.2
0.5
1
2
5
10
30
50
- V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 14. Maximum Safe Operating Area.
1
0 .5
D = 0.5
0 .2
0 .1
0 .0 5
0.2
0.1
0.05
R θ JA (t) = r(t) * R θ JA
R θ JA = See Note 1c
0 .0 2
0 .0 1
0 .0 0 5
0.02
0.01
Single Pulse
P(pk)
t 1
T J - T A
t 2
= P * R θ JA (t)
0 .0 0 2
Duty Cycle, D = t 1 / t 2
0 .0 0 1
0 .0001
0 .001
0 .0 1
0 .1
1
10
100
300
t 1 , TIME (sec)
Figure 15. Transient Thermal Response Curve .
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDS9400A.SAM
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NDS9400A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SO-8
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NDS9405_D84Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS9407 功能描述:MOSFET Single P-Ch MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube