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| 型号： | NDS331N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 1.3A SSOT3 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Mold Compound Change 08/April/2008 |
| 产品目录绘图： | SuperSOT-3, SOT-23 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 1.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 162pF @ 10V |
| 功率 - 最大： | 460mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1602 (CN2011-ZH PDF) |
| 其它名称： | NDS331NDKR |
July 1996
NDS331N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones, PCMCIA
cards, and other battery powered circuits where fast
switching, and low in-line power loss are needed in a very
small outline surface mount package.
Features
1.3 A, 20 V. R DS(ON) = 0.21 ? @ V GS = 2.7 V
R DS(ON) = 0.16 ? @ V GS = 4.5 V.
Industry standard outline SOT-23 surface mount package
using poprietary SuperSOT TM -3 design for superior thermal
and electrical capabilities.
High density cell design for extremely low R DS(ON) .
Exceptional on-resistance and maximum DC current
capability.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDS331N
20
8
Units
V
V
I D
Maximum Drain Current - Continuous
(Note 1a)
1.3
A
- Pulsed
10
P D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
NDS331N Rev.E
相关PDF资料 |
PDF描述 |
|---|---|
| NDS332P | MOSFET P-CH 20V 1A SSOT3 |
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| NDS355AN | MOSFET N-CH 30V 1.7A SSOT3 |
| NDS355N | MOSFET N-CH 30V 1.6A SSOT3 |
| NDS7002A | MOSFET N-CH 60V 280MA SOT-23 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDS331N | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 20V 1.3A SUPER SOT |
| NDS331N_D87Z | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS331N_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDS331N-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDS Sereis N-Channel 20 V 0.16O Enhancement Mode Field Effect Transistor SSOT-3 |
| NDS332 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Logic Level Enhancement Mode Field Effect Transistor |
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