参数资料
型号: NDS331N
厂商: Fairchild Semiconductor
文件页数: 6/7页
文件大小: 0K
描述: MOSFET N-CH 20V 1.3A SSOT3
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品变化通告: Mold Compound Change 08/April/2008
产品目录绘图: SuperSOT-3, SOT-23
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 160 毫欧 @ 1.5A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 5nC @ 4.5V
输入电容 (Ciss) @ Vds: 162pF @ 10V
功率 - 最大: 460mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: 3-SSOT
包装: 标准包装
产品目录页面: 1602 (CN2011-ZH PDF)
其它名称: NDS331NDKR
Typical Electrical Characteristics (continued)
8
20
0u
V DS = 5.0V
10
10
s
S(O
LIM
0m
6
T J = -55°C
25°C
3
1
RD
N)
IT
10
10
s
ms
4
125°C
0.3
1s
1 0 s
2
0.1
0.03
V GS = 2.7V
SINGLE PULSE
R θ JA =See Note1b
T A = 25°C
DC
0
0
1
2
3
4
0.01
0.1
0.2
0.5
1
2
5
10
20
30
I D , DRAIN CURRENT (A)
Figure 13. Transconductance Variation with Drain
Current and Temperature .
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 14. Maximum Safe Operating Area.
1
0.8
0.6
0.4
1b
1a
1.8
1.6
1.4
1a
4.5"x5" FR-4 Board
1.2
T A = 25 o C
T A = 25 C
0.2
4.5"x5" FR-4 Board
o
1b
Still Air
V GS = 2.7V
Still Air
2oz COPPER MOUNTING PAD AREA (in )
0
0
0.1 0.2 0.3
2
0.4
1
0
0.1 0.2 0.3 2
2oz COPPER MOUNTING PAD AREA (in )
0.4
Figue 15. SuperSOT TM _ 3 Maximum
Steady-State Power Dissipation. versus Copper
Mounting Pad Area.
1
Figure 16. Maximum Steady-State Drain
Current versus Copper Mounting Pad. Area
0.5
D = 0.5
0.2
0.1
0.05
0.2
0.1
0.05
R θ JA (t) = r(t) * R θ JA
R θ JA = See Note 1b
P(pk)
0.02
0.01
0.02
0.01
t 1
t 2
0.005
Single Pulse
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 /t 2
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t 1 , TIME (sec)
Figure 17. Transient Thermal Response Curve.
Note : Thermal characterization performed using the conditions described in note 1b.
Transient thermal
response will change depending on the circuit board design.
NDS331N Rev.E
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