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参数资料
| 型号： | NDP6060 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 48A TO-220AB |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 48A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 24A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 70nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 100W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1605 (CN2011-ZH PDF) |
TO-220 Tape and Reel Data and Package Dimensions
TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are ship ped normally in tube. The tube is
made of PVC plastic treated with anti -stati c agent.These
tubes in standard option are placed inside a dissipative
45 unit s per Tube
12 Tubes per Bag
530mm x 130mm x 83mm
plastic bag, barcode labeled, and placed inside a box
made of recyclable corrugated pa per. One box contains
two ba gs maximum (see fig. 1.0). And one or several o f
these boxes are placed inside a labeled shipp ing bo x
whic h c omes in different sizes dependi ng on the nu mber
of parts ship ped. The other option comes in bulk as
described in the Packagin g Information table. The unit s in
this option are placed inside a small box laid w ith anti-
static bubble sheet. These smaller boxes are individually
labeled and placed ins ide a larger box (see fig. 3.0).
These larger or intermediate boxes then will b e placed
finally inside a labeled shipping box whic h still comes in
different sizes depending on the number of units shipped.
2 bag s per Box
Conduct ive Plasti c B ag
TO-220 Packaging
Intermediate box
FSCINT Labe l samp le
Information: Figure 2.0
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
TO-220 Packaging Information
Standard
Packaging Option
(no f l ow code )
S62Z
1080 uni ts maxi mum
quant it y per bo x
LOT:
NSID:
CBVK741B019
FDP7060
QTY: 1080
SPEC:
Packaging type
Qty per Tube/Box
Box Dimension (mm)
Rail/Tube
45
530x130x83
BULK
300
114x102x51
FSCINT Label
D/C1:
D9842
SPEC REV:
QA REV:
B2
(FSCINT)
Max qty per Box
Weight per unit (gm)
1,080
1.4378
1,500
1.4378
Note/Comments
TO-220 bulk Packing
Configuration: Figure 3.0
FSCINT Label
An ti-stati c
Bubbl e Sheet s
530mm x 130mm x 83mm
Intermediate box
1500 uni ts maxi mum
quant it y per intermediate box
TO-220 Tube
300 units per
EO70 box
114mm x 102mm x 51mm
EO70 Immed iate Box
5 EO70 boxe s per per
Interm ediate Bo x
FSCINT Label
Configuration: Figure 4.0
Note: All dim ensions are in inches
0.123
+0.001
-0.003
0.165
0.080
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
0.450
± .030
1.300
± .015
0.275
0.032
± .003
0.160
20.000
+0.031
-0.065
0.800
0.275
August 1999, Rev. B
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDP6060 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N TO-220 |
| NDP6060_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDP6060L | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDP6060L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
| NDP606A | 制造商:NSC 制造商全称:National Semiconductor 功能描述:N-Channel Enhancement Mode Power Fleid Effect Transistor |
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