参数资料
型号: NDT452AP
厂商: Fairchild Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: MOSFET P-CH 30V 5A SOT-223-4
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品目录绘图: MOSFET SOT-223 Pkg
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 65 毫欧 @ 5A,10V
Id 时的 Vgs(th)(最大): 2.8V @ 250µA
闸电荷(Qg) @ Vgs: 30nC @ 10V
输入电容 (Ciss) @ Vds: 690pF @ 15V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223-3
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: NDT452APDKR
Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = -250 μA
V DS = -24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
T J = 55°C
-30
-1
-10
100
-100
V
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = -250 μA
-1
-1.6
-2.8
V
T J = 125°C
-0.7
-1.2
-2.2
R DS(ON)
Static Drain-Source On-Resistance
V GS = -10 V, I D = -5.0 A
0.052
0.065
?
V GS = -4.5 V, I D = -4.3 A
T J = 125°C
0.075
0.085
0.13
0.1
I D(on)
On-State Drain Current
V GS = -10 V, V DS = -5 V
-15
A
V GS = -4.5 V, V DS = -5 V
-5
g FS
Forward Transconductance
V DS = -10 V, I D = -5.0 A
7
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -15 V, V GS = 0 V,
f = 1.0 MHz
690
430
160
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -10 V, I D = -1 A,
V GEN = -10 V, R GEN = 6 ?
V DS = -10 V,
I D = -5.0 A, V GS = -10 V
9
20
40
19
22
3.2
5.2
20
30
50
40
30
ns
ns
ns
ns
nC
nC
nC
NDT452AP Rev. B1
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