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| 型号： | NDT454P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 5.9A SOT-223 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 5.9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.7V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 950pF @ 15V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 其它名称： | NDT454PFSDKR |
June 1996
NDT454P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
Features
-5.9A, -30V. R DS(ON) = 0.05 ? @ V GS = -10V
R DS(ON) = 0.07 ? @ V GS = -6V
R DS(ON) = 0.09 ? @ V GS = -4.5V.
High density cell design for extremely low R DS(ON).
High power and current handling capability in a widely used
surface mount package.
fast switching, low in-line power loss, and resistance to
transients are needed.
____________________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDT454P
-30
±20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
±5.9
A
- Pulsed
±15
P D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J ,T STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
? 1997 Fairchild Semiconductor Corporation
NDT454P Rev. D2
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDT454P(J23Z) | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
| NDT454P | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| NDT455N | 功能描述:MOSFET SOT-223 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDT455N(J23Z) | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| NDT456 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
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