参数资料
型号: NDT454P
厂商: Fairchild Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: MOSFET P-CH 30V 5.9A SOT-223
产品培训模块: High Voltage Switches for Power Processing
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 5.9A,10V
Id 时的 Vgs(th)(最大): 2.7V @ 250µA
闸电荷(Qg) @ Vgs: 40nC @ 10V
输入电容 (Ciss) @ Vds: 950pF @ 15V
功率 - 最大: 1.1W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223-3
包装: 标准包装
其它名称: NDT454PFSDKR
Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = -250 μA
V DS = -24 V, V GS = 0 V
V DS = -15 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
T J = 70°C
-30
-1
-5
100
-100
V
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = -250 μA
-1
-2.7
V
R DS(ON)
Static Drain-Source On-Resistance
V GS = -10 V, I D = -5.9 A
0.038
0.05
?
V GS = -6 V, I D = -5.2 A
V GS = -4.5 V, I D = -4.6 A
0.046
0.064
0.07
0.09
I D(on)
On-State Drain Current
V GS = -10 V, V DS = -5 V
-15
A
V GS = -4.5, V DS = -5V
-5
g FS
Forward Transconductance
V DS = 15 V, I D = 5.9 A
10
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 15 V, V GS = 0 V,
f = 1.0 MHz
950
610
220
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
V DD = -15 V, I D = -1 A,
V GEN = -10 V, R GEN = 6 ?
V DS = -15 V,
I D = -5.9 A, V GS = -10 V
10
18
80
45
29
3
30
60
120
100
40
ns
ns
ns
ns
nC
Q gd
Gate-Drain Charge
11
NDT454P Rev. D2
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