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参数资料
| 型号： | NE3510M04-A |
| 厂商： | CEL |
| 文件页数： | 1/11页 |
| 文件大小： | 181K |
| 描述： | HJ-FET N-CH 4GHZ M04 |
| 产品目录绘图： | NE3, NE6 Series |
| 标准包装： | 120 |
| 晶体管类型： | HFET |
| 频率： | 4GHz |
| 增益： | 16dB |
| 电压 - 测试： | 2V |
| 额定电流： | 97mA |
| 噪音数据： | 0.45dB |
| 电流 - 测试： | 15mA |
| 功率 - 输出： | 11dBm |
| 电压 - 额定： | 4V |
| 封装/外壳： | M04 |
| 供应商设备封装： | M04 |
| 包装： | 散装 |
| 产品目录页面： | 577 (CN2011-ZH PDF) |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10676EJ01V0DS (1st edition)
Date Published July 2007 NS
2007
FEATURES
? Low noise figure and high associated gain
NF = 0.45 dB TYP., Ga
= 16 dB TYP. @ f = 4 GHz, VDS
= 2 V, I
D
= 15 mA
NF = 0.35 dB TYP., Ga
= 19 dB TYP. @ f = 2 GHz, VDS
= 2 V, I
D
= 10 mA (Reference only)
? Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
? Satellite radio (SDARS, DMB, etc.) antenna LNA
? Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number Order Number Package Quantity Marking Supplying Form
V81
50
pcs
(Non
reel)
NE3510M04-A
NE3510M04
NE3510M04-T2 NE3510M04-T2-A
Flat-lead 4-pin thin-
type super minimold
3 kpcs/reel
(M04) (Pb-Free)
? 8 mm wide embossed taping
? Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3510M04-A
ABSOLUTE MAXIMUM RATINGS (TA
= +25CC)
Parameter Symbol Ratings Unit
Drain to Source Voltage VDS
4.0 V
Gate to Source Voltage VGS
[3.0 V
ID
Drain
Current
IDSS
mA
IG
Gate
Current
140
JA
Total Power Dissipation P
Note
tot
125 mW
Channel Temperature Tch
+150
CC
Storage Temperature Tstg
[65 to +150
CC
Note
Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3510M04-T2 | 制造商:CEL 制造商全称:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3510M04-T2-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3511S02 | 制造商:CEL 制造商全称:CEL 功能描述:X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3511S02-A | 功能描述:射频GaAs晶体管 X to Ku Band Super Low Noise Amp N-Ch RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3511S02-T1C | 制造商:CEL 制造商全称:CEL 功能描述:X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
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