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参数资料
| 型号： | NE3511S02-A |
| 厂商： | CEL |
| 文件页数： | 1/8页 |
| 文件大小： | 298K |
| 描述： | HJ-FET NCH 13.5DB S02 |
| 标准包装： | 1 |
| 晶体管类型： | HFET |
| 频率： | 12GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.3dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | 4-SMD，扁平引线 |
| 供应商设备封装： | S02 |
| 包装： | 散装 |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3511S02
X
TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10642EJ01V0DS (1st edition)
Date Published October 2006 NS CP(N)
FEATURES
?
Super low noise figure and
high associated gain
NF = 0.30
dB TYP., Ga
= 13.5
dB TYP. @
f = 12 GHz
?
Micro-X plastic (S02) package
APPLICATIONS
?
X
to Ku-band DBS LNB
?
Other X
to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3511S02-T1C
NE3511S02-T1C-A
S02 (Pb-Free)
2 kpcs/reel
B
? 8 mm wide embossed taping
? Pin 4
(Gate) faces
the perforation side
of the tape
NE3511S02-T1D
NE3511S02-T1D-A
10 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3511S02-A
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
?3
V
Drain
Current
ID
IDSS
mA
Gate
Current
IG
100
?A
Total Power Dissipation
Ptot
Note
165
mW
Channel
Temperature
Tch
+125
?C
Storage Temperature
Tstg
?65 to +125
?C
Note
Mounted on 1.08 cm
2
?
1.0 mm (t) glass epoxy PCB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3511S02-T1C | 制造商:CEL 制造商全称:CEL 功能描述:X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3511S02-T1C-A | 功能描述:射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3511S02-T1D | 制造商:CEL 制造商全称:CEL 功能描述:X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3511S02-T1D-A | 制造商:CEL 制造商全称:CEL 功能描述:X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3512S02 | 制造商:CEL 制造商全称:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISTOR |
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