参数资料
型号: NE3511S02-A
厂商: CEL
文件页数: 8/8页
文件大小: 298K
描述: HJ-FET NCH 13.5DB S02
标准包装: 1
晶体管类型: HFET
频率: 12GHz
增益: 13.5dB
电压 - 测试: 2V
额定电流: 70mA
噪音数据: 0.3dB
电流 - 测试: 10mA
电压 - 额定: 4V
封装/外壳: 4-SMD,扁平引线
供应商设备封装: S02
包装: 散装
8
Data Sheet PG10642EJ01V0DS
NE3511S02
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the
following points.
? Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
? Do not burn, destroy, cut, crush, or chemically dissolve the product.
? Do not lick the product or in any way allow it to enter the mouth.
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