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参数资料
| 型号： | NE3514S02-T1D-A |
| 厂商： | CEL |
| 文件页数： | 1/8页 |
| 文件大小： | 279K |
| 描述： | HJ-FET NCH 10DB S02 |
| 标准包装： | 10,000 |
| 晶体管类型： | HFET |
| 频率： | 20GHz |
| 增益： | 10dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.75dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | 4-SMD，扁平引线 |
| 供应商设备封装： | S02 |
| 包装： | 带卷 (TR) |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3514S02
K BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10593EJ01V0DS (1st edition)
Date Published February
2006 CP(N)
FEATURES
?
Super low noise figure and
high associated gain
NF = 0.75
dB TYP., Ga
= 10
dB TYP. @
f = 20
GHz
?
Micro-X plastic (S02) package
APPLICATIONS
?
20 GHz-band DBS LNB
?
Other K-band communication systems
ORDERING INFORMATION
Part Number
Order
Number
Package
Quantity
Marking
Supplying Form
NE3514S02-T1C
NE3514S02-T1C-A
S02 (Pb-Free)
2 kpcs/reel
D
? 8 mm wide embossed taping
? Pin 4
(Gate) faces
the perforation side
of the tape
NE3514S02-T1D
NE3514S02-T1D-A
10 kpcs/reel
Remark
To order
evaluation samples, contact your nearby sales office.
Part number for sample order:
NE3514S02-A
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
?3
V
Drain
Current
ID
IDSS
mA
Gate
Current
IG
100
?A
Total Power Dissipation
Ptot
Note
165
mW
Channel
Temperature
Tch
+125
?C
Storage Temperature
Tstg
?65 to +125
?C
Note
Mounted on 1.08 cm
2
?
1.0 mm (t) glass epoxy PCB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3515S02-A | 功能描述:射频GaAs晶体管 X to Ku-BAND SUPER LOW NOISE AMP N-CH RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3515S02-T1C-A | 功能描述:射频GaAs晶体管 Super Low Noise Pseudomorphic RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3515S02-T1D-A | 功能描述:射频GaAs晶体管 Super Low Noise Pseudomorphic RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3516S02 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
| NE3516S02-A | 制造商:California Eastern Laboratories (CEL) 功能描述:SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Product that comes on tape, but is not reeled 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH S02 4-MICROX |
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