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参数资料
| 型号： | NE3509M04-T2-A |
| 厂商： | CEL |
| 文件页数： | 1/9页 |
| 文件大小： | 381K |
| 描述： | AMP HJ-FET 2GHZ SOT-343 |
| 标准包装： | 3,000 |
| 晶体管类型： | HFET |
| 频率： | 2GHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 60mA |
| 噪音数据： | 0.4dB |
| 电流 - 测试： | 10mA |
| 功率 - 输出： | 11dBm |
| 电压 - 额定： | 4V |
| 封装/外壳： | SC-82A，SOT-343 |
| 供应商设备封装： | SOT-343 |
| 包装： | 带卷 (TR) |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10608EJ02V0DS (2nd
edition)
Date Published October
2008
NS
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
FEATURES
?
Super low noise figure and
high associated gain
NF = 0.4
dB TYP., Ga
= 17.5
dB TYP. @
f = 2 GHz,
VDS
= 2 V, ID
= 10 mA
?
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
?
Satellite
radio
(SDARS, DMB, etc.) antenna LNA
?
GPS antenna LNA
?
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3509M04
NE3509M04-A
Flat-lead 4-pin thin-
type super minimold
(M04)
(Pb-Free)
50 pcs (Non reel)
V80
? 8 mm wide embossed taping
? Pin 1
(Source), Pin 2 (Drain) face
the perforation side of the tape
NE3509M04-T2
NE3509M04-T2-A
3 kpcs/reel
NE3509M04-T2B
NE3509M04-T2B-A
15 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04-A
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
?3.0
V
Drain
Current
ID
IDSS
mA
Gate
Current
IG
200
?A
Total
Power Dissipation
Ptot
Note
150
mW
Channel
Temperature
Tch
+150
?C
Storage Temperature
Tstg
?65 to +150
?C
Note
Mounted on 1.08 cm
2
?
1.0 mm (t) glass epoxy PCB
<R>
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3509M14 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier |
| NE3510M04 | 制造商:NEC 制造商全称:NEC 功能描述:L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3510M04-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3510M04-T2 | 制造商:CEL 制造商全称:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3510M04-T2-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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