参数资料
型号: NE3512S02-T1D-A
厂商: CEL
文件页数: 1/8页
文件大小: 296K
描述: HJ-FET NCH 13.5DB S02
标准包装: 10,000
晶体管类型: HFET
频率: 12GHz
增益: 13.5dB
电压 - 测试: 2V
额定电流: 70mA
噪音数据: 0.35dB
电流 - 测试: 10mA
电压 - 额定: 4V
封装/外壳: 4-SMD,扁平引线
供应商设备封装: S02
包装: 带卷 (TR)
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02
C TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
Document No. PG10592EJ01V0DS (1st edition)
Date Published February
2006 CP(N)
FEATURES
?
Super low noise figure and
high associated gain
NF = 0.35
dB TYP., Ga
= 13.5
dB TYP. @
f = 12 GHz
?
Micro-X plastic (S02) package
APPLICATIONS
?
C to Ku-band DBS LNB
?
Other C to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3512S02-T1C
NE3512S02-T1C-A
S02 (Pb-Free)
2 kpcs/reel
C
? 8 mm wide embossed taping
? Pin 4
(Gate) faces
the perforation side
of the tape
NE3512S02-T1D
NE3512S02-T1D-A
10 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3512S02-A
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4
V
Gate to Source Voltage
VGS
?3
V
Drain
Current
ID
IDSS
mA
Gate
Current
IG
100
?A
Total Power Dissipation
Ptot
Note
165
mW
Channel
Temperature
Tch
+125
?C
Storage Temperature
Tstg
?65 to +125
?C
Note
Mounted on 1.08 cm
2
?
1.0 mm (t) glass epoxy PCB
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