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参数资料
| 型号： | NE3512S02-T1D-A |
| 厂商： | CEL |
| 文件页数： | 8/8页 |
| 文件大小： | 296K |
| 描述： | HJ-FET NCH 13.5DB S02 |
| 标准包装： | 10,000 |
| 晶体管类型： | HFET |
| 频率： | 12GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.35dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | 4-SMD，扁平引线 |
| 供应商设备封装： | S02 |
| 包装： | 带卷 (TR) |
8
Data Sheet PG10592EJ01V0DS
NE3512S02
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the
following points.
? Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
? Do not burn, destroy, cut, crush, or chemically dissolve the product.
? Do not lick the product or in any way allow it to enter the mouth.
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相关代理商/技术参数 |
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| NE3513M04 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
| NE3513M04-A | 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH LNA M04 4SMD |
| NE3513M04-T2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
| NE3513M04-T2-A | 制造商:California Eastern Laboratories (CEL) 功能描述:SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Tape and Reel 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH LNA M04 4SMD |
| NE3513M04-T2B | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
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