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参数资料
| 型号： | NE3509M04-T2-A |
| 厂商： | CEL |
| 文件页数： | 9/9页 |
| 文件大小： | 381K |
| 描述： | AMP HJ-FET 2GHZ SOT-343 |
| 标准包装： | 3,000 |
| 晶体管类型： | HFET |
| 频率： | 2GHz |
| 增益： | 17.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 60mA |
| 噪音数据： | 0.4dB |
| 电流 - 测试： | 10mA |
| 功率 - 输出： | 11dBm |
| 电压 - 额定： | 4V |
| 封装/外壳： | SC-82A，SOT-343 |
| 供应商设备封装： | SOT-343 |
| 包装： | 带卷 (TR) |
Data Sheet PG10608EJ02V0DS
9
NE3509M04
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the
following points.
? Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
? Do not burn, destroy, cut, crush, or chemically dissolve the product.
? Do not lick the product or in any way allow it to enter the mouth.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3509M14 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier |
| NE3510M04 | 制造商:NEC 制造商全称:NEC 功能描述:L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3510M04-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3510M04-T2 | 制造商:CEL 制造商全称:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3510M04-T2-A | 功能描述:射频GaAs晶体管 L-S Band Lo No Amp RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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