参数资料
型号: NE3515S02-T1C-A
厂商: CEL
文件页数: 9/9页
文件大小: 409K
描述: FET RF HFET 12GHZ 2V 10MA S02
标准包装: 2,000
晶体管类型: HFET
频率: 12GHz
增益: 12.5dB
电压 - 测试: 2V
额定电流: 88mA
噪音数据: 0.3dB
电流 - 测试: 10mA
功率 - 输出: 14dBm
电压 - 额定: 4V
封装/外壳: 4-SMD,扁平引线
供应商设备封装: S02
包装: 带卷 (TR)
Data Sheet PG10708EJ01V0DS
9
NE3515S02
Caution
GaAs Products
This product uses gallium arsenide
(GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the
following points.
? Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
? Do not burn, destroy, cut, crush, or chemically dissolve the product.
? Do not lick the product or in any way allow it to enter the mouth.
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相关代理商/技术参数
参数描述
NE3515S02-T1D-A 功能描述:射频GaAs晶体管 Super Low Noise Pseudomorphic RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE3516S02 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3516S02-A 制造商:California Eastern Laboratories (CEL) 功能描述:SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Product that comes on tape, but is not reeled 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH S02 4-MICROX
NE3516S02-T1C 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3516S02-T1C-A 制造商:California Eastern Laboratories (CEL) 功能描述:SUPER LOW NOISE PSEUDOMORPHIC HJ FET, ROHS COMPLIANT - Tape and Reel 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH S02 4-MICROX