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| 型号： | NE3520S03-A |
| 厂商： | CEL |
| 文件页数： | 4/10页 |
| 文件大小： | 474K |
| 描述： | FET RF HFET 20GHZ 2V 10MA S03 |
| 标准包装： | 1 |
| 晶体管类型： | HFET |
| 频率： | 20GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.65dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | S03 |
| 供应商设备封装： | S03 |
| 包装： | 散装 |
NE3520S03
R09DS0029EJ0100 Rev.1.00 Page 3 of 8
Oct 18, 2011
TYPICAL CHARACTERISTICS (TA
= +25
°C, unless otherwise specified)
Total Power Dissipation P
tot
(mW)
Ambient Temperature TA
(
°C)
vs. AMBIENT TEMPERATURE
TOTAL POWER DISSIPATION
250
200
150
100
50
0
50 100 150 200 250
Drain Current I
D
(mA)
Gate to Source Voltage VGS
(V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
VDS
= 2 V
0–0.8 –0.6 –0.4 –0.2 0
Drain Current ID
(mA)
Minimum Noise Figure NF
min
(dB)
Associated Gain G
a
(dB)
ASSOCIATED GAIN vs. DRAIN CURRENT
MINIMUM NOISE FIGURE,
f = 20 GHz
VDS
= 2 V
0.50255
10
15
20
6
Drain Current I
D
(mA)
Drain to Source Voltage VDS
(V)
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
0
–0.5 V
0.0 1.0 2.0 3.0 4.0
Frequency f (GHz)
Minimum Noise Figure NF
min
(dB)
Associated Gain G
a
(dB)
ASSOCIATED GAIN vs. FREQUENCY
MINIMUM NOISE FIGURE,
NFmin
Ga
VDS
= 2 V
ID
= 10 mA
20
18
19
11
12
13
14
15
17
16
10
0.210 15 20 25
Mounted on Glass Epoxy PCB
(1.08 cm2
×
1.0 mm (t) )
80
60
70
50
40
30
20
10
80
60
70
50
40
30
20
10
VGS
= 0 V
–0.3 V
–0.1 V
–0.4 V
–0.2 V
1.2
1.0
1.1
0.6
0.7
0.8
0.9
0.3
0.4
0.5
16
14
15
7
8
9
10
11
13
12
1.5
1.3
1.4
0.9
1.0
1.1
1.2
0.6
0.7
0.8
Ga
NFmin
Remark
The graphs indicate nominal characteristics.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3520S03-T1C | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3520S03-T1C-A | 功能描述:FET RF HFET 20GHZ 2V 10MA S03 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| NE3520S03-T1D | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3521M04 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3521M04-T2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
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