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| 型号： | NE3520S03-A |
| 厂商： | CEL |
| 文件页数： | 9/10页 |
| 文件大小： | 474K |
| 描述： | FET RF HFET 20GHZ 2V 10MA S03 |
| 标准包装： | 1 |
| 晶体管类型： | HFET |
| 频率： | 20GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.65dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | S03 |
| 供应商设备封装： | S03 |
| 包装： | 散装 |
NE3520S03
R09DS0029EJ0100 Rev.1.00 Page 8 of 8
Oct 18, 2011
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health
if inhaled or ingested, so please observe
the following points.
? Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other
such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
? Do not burn, destroy, cut, crush, or chemically dissolve the product.
? Do not lick the product or in any way allow it to enter the mouth.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3520S03-T1C | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3520S03-T1C-A | 功能描述:FET RF HFET 20GHZ 2V 10MA S03 RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| NE3520S03-T1D | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3521M04 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3521M04-T2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
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