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| 型号： | NE552R479A-A |
| 厂商： | CEL |
| 文件页数： | 1/7页 |
| 文件大小： | 599K |
| 描述： | MOSFET LD N-CHAN 3V 79A |
| 标准包装： | 1 |
| 晶体管类型： | N 通道 |
| 频率： | 2.45GHz |
| 增益： | 11dB |
| 电压 - 测试： | 3V |
| 额定电流： | 300mA |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 26dBm |
| 电压 - 额定： | 15V |
| 封装/外壳： | 79A |
| 供应商设备封装： | 79A |
| 包装： | 散装 |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10124EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
SILICON POWER MOS FET
NE552R479A
3.0 V OPERATION SILICON RF POWER LDMOS FET
FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
DATA SHEET
DESCRIPTION
The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology (our
WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 26.0 dBm
output power with 45% power added efficiency at 2.45 GHz under the 3.0 V supply voltage.
FEATURES
?
High output power
: Pout
= 26.0 dBm TYP. (VDS
= 3.0 V, IDset
= 200 mA, f = 2.45 GHz, Pin
= 19 dBm)
?
High power added efficiency
: ?add
= 45% TYP. (VDS
= 3.0 V, IDset
= 200 mA, f = 2.45 GHz, Pin
= 19 dBm)
?
High linear gain
: GL
= 11 dB TYP. (VDS
= 3.0 V, IDset
= 200 mA, f = 2.45 GHz, Pin
= 10 dBm)
?
Surface mount package
: 5.7 ?
5.7 ?
1.1 mm MAX.
?
Single supply
: VDS
= 2.8 to 6.0 V
APPLICATIONS
?
Digital cellular phones
: 3.0 V GSM1900 Pre Driver
?
Analog cellular phones
: 2.8 V AMPS Handsets
?
BluetoothTM
applications
: 3.0 V Class 1 Devices
?
Others
: 3.0 V Two-Way Pagers
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE552R479A-T1
79A
AW
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 1 kpcs/reel
NE552R479A-T1A
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 5 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE552R479A-A
The mark ?
shows major revised points.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE552R479A-EVPW09 | 功能描述:射频开发工具 For NE552R479A 900M RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| NE552R479A-EVPW24 | 功能描述:射频开发工具 For NE552R479A-A Power at 2.4 GHz RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| NE552R479A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 15V 0.3A 4-Pin Case 79A T/R |
| NE552R479A-T1-A | 功能描述:射频GaAs晶体管 L&S Band Med Power RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE552R479A-T1A-A | 制造商:CEL 制造商全称:CEL 功能描述:NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
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