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参数资料
| 型号： | NE552R479A-A |
| 厂商： | CEL |
| 文件页数： | 2/7页 |
| 文件大小： | 599K |
| 描述： | MOSFET LD N-CHAN 3V 79A |
| 标准包装： | 1 |
| 晶体管类型： | N 通道 |
| 频率： | 2.45GHz |
| 增益： | 11dB |
| 电压 - 测试： | 3V |
| 额定电流： | 300mA |
| 电流 - 测试： | 200mA |
| 功率 - 输出： | 26dBm |
| 电压 - 额定： | 15V |
| 封装/外壳： | 79A |
| 供应商设备封装： | 79A |
| 包装： | 散装 |
Data Sheet PU10124EJ03V0DS
2
NE552R479A
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15.0
V
Gate to Source Voltage
VGS
5.0
V
Drain Current
ID
300
mA
Drain Current (Pulse Test)
IDNote
600
mA
Total Power Dissipation
Ptot
10
W
Channel Temperature
Tch
125
?C
Storage Temperature
Tstg
?55 to +125
?C
Note
Duty Cycle 50%, Ton
?
1 s
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
2.8
3.0
6.0
V
Gate to Source Voltage
VGS
0
2.0
3.0
V
Drain Current
ID
Duty Cycle 50%, T
on
?
1 s
?
200
500
mA
Input Power
Pin
f = 2.45 GHz, VDS
= 3.0 V
18
19
25
dBm
ELECTRICAL CHARACTERISTICS
(TA
= +25?C, unless otherwise specified, using NEC standard test fixture)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSS
VGS
= 5.0 V
?
?
100
nA
Drain to Source
Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS
= 6.0 V
?
?
100
nA
Gate Threshold Voltage
Vth
VDS
= 3.5 V, ID
= 1 mA
1.0
1.4
1.9
V
Thermal Resistance
Rth
Channel to Case
?
?
10
?C/W
Transconductance
Gm
VDS
= 3.5 V, ID
= 100 mA
?
0.4
?
S
Drain to Source Breakdown Voltage
BVDSS
IDSS
= 10 ?A
15
18
?
V
Output Power
Pout
f = 2.45 GHz, VDS
= 3.0 V,
24.0
26.0
?
dBm
Drain Current
ID
Pin
= 19 dBm,
?
230
?
mA
Power Added Efficiency
?add
IDset
= 200 mA (RF OFF),
Note1
35
45
?
%
Linear Gain
Note2
GL
?
11
?
dB
Notes
1.
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
2.
Pin
= 10 dBm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE552R479A-EVPW09 | 功能描述:射频开发工具 For NE552R479A 900M RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| NE552R479A-EVPW24 | 功能描述:射频开发工具 For NE552R479A-A Power at 2.4 GHz RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V |
| NE552R479A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 15V 0.3A 4-Pin Case 79A T/R |
| NE552R479A-T1-A | 功能描述:射频GaAs晶体管 L&S Band Med Power RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE552R479A-T1A-A | 制造商:CEL 制造商全称:CEL 功能描述:NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
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