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参数资料
| 型号： | NE5500234-T1-AZ |
| 厂商： | CEL |
| 文件页数： | 2/6页 |
| 文件大小： | 302K |
| 描述： | MOSFET LD N-CH 4.8V 400MA SOT89 |
| 标准包装： | 1,000 |
| 晶体管类型： | N 通道 |
| 频率： | 1.9GHz |
| 电压 - 测试： | 4.8V |
| 额定电流： | 1A |
| 电流 - 测试： | 400mA |
| 功率 - 输出： | 32.5dBm |
| 电压 - 额定： | 20V |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | SOT-89 |
| 包装： | 带卷 (TR) |
Data Sheet PU10405EJ02V0DS
2
NE5500234
ABSOLUTE MAXIMUM RATINGS (TA
= +25?C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
20
V
Gate to Source Voltage
VGS
6.0
V
Drain Current
ID
1.0
A
Total Power Dissipation
Ptot
10
W
Channel Temperature
Tch
125
?C
Storage Temperature
Tstg
?65 to +125
?C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
3.0
4.8
6.0
V
Gate to Source Voltage
VGS
0
2.0
3.5
V
Drain Current
ID
Duty Cycle ?
50%, Ton
?
1 s
?
0.75
1.0
A
Input Power
Pin
f = 1.9 GHz, VDS
= 4.8
V
?
?
27
dBm
ELECTRICAL CHARACTERISTICS
(TA
= +25?C, unless otherwise specified, using our standard test fixture.)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leakage
Current
IGSO
VGS
= 6.0 V
?
?
100
nA
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IDSS
VDS
= 8.5 V
?
?
100
nA
Gate Threshold Voltage
Vth
VDS
= 4.8 V, IDS
= 1 mA
1.0
1.4
2.0
V
Thermal Resistance
Rth
Channel to Case
?
10
?
?C/W
Transconductance
gm
VDS
= 4.8 V, IDS
= 500
mA
?
840
?
mS
Drain
to Source Breakdown Voltage
BVDSS
IDSS
= 10 ?A
20
24
?
V
Output Power
Pout
f = 1.9 GHz, VDS
= 4.8
V,
Pin
= 25
dBm,
IDset
= 400 mA
(RF OFF)
31.5
32.5
?
dBm
Drain Current
ID
?
610
?
mA
Power Added Efficiency
?add
43
50
?
%
Linear Gain
Note
GL
?
11.0
?
dB
Note
Pin
= 10 dBm
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
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