参数资料
型号: NE5517NG
厂商: ON Semiconductor
文件页数: 13/15页
文件大小: 0K
描述: IC AMP XCONDUCTANCE DUAL 16-DIP
标准包装: 25
放大器类型: 跨导
电路数: 2
输出类型: 推挽式
转换速率: 50 V/µs
增益带宽积: 2MHz
电流 - 输入偏压: 400nA
电压 - 输入偏移: 400µV
电流 - 电源: 2.6mA
电流 - 输出 / 通道: 650µA
电压 - 电源,单路/双路(±): 4 V ~ 44 V,±2 V ~ 22 V
工作温度: 0°C ~ 70°C
安装类型: 通孔
封装/外壳: 16-DIP(0.300",7.62mm)
供应商设备封装: 16-DIP
包装: 管件
NE5517, NE5517A, AU5517
http://onsemi.com
7
APPLICATIONS
4, 13
2, 15
3, 14
+
NE5517
11
6
5, 12
1, 16
+15V
15V
7, 10
8, 9
INPUT
OUTPUT
390pF
15V
51W
0.01mF
0.001mF
0.01mF
Figure 20. Unity Gain Follower
10kW
1.3kW
10kW
62kW
5kW
CIRCUIT DESCRIPTION
The circuit schematic diagram of one-half of the
AU5517/NE5517, a dual operational transconductance
amplifier with linearizing diodes and impedance buffers, is
shown in Figure 21.
Transconductance Amplifier
The transistor pair, Q4 and Q5, forms a transconductance
stage. The ratio of their collector currents (I4 and I5,
respectively) is defined by the differential input voltage, VIN,
which is shown in Equation 1.
VIN +
KT
q In
I5
I4
(eq. 1)
Where VIN is the difference of the two input voltages
KT
26 mV at room temperature (300°k).
Transistors Q1, Q2 and diode D1 form a current mirror which
focuses the sum of current I4 and I5 to be equal to amplifier bias
current IB:
I4 ) I5 + IB
(eq. 2)
If VIN is small, the ratio of I5 and I4 will approach unity and
the Taylor series of In function can be approximated as
KT
q In
I5
I4
[ KT
q
I5 * I4
I4
(eq. 3)
and I4 ^ I5 ^ IB
KT
q In
I5
I4
[ KT
q
I5 * I4
1 2IB
+ 2KT
q
I5 * I4
IB
+ VIN (eq. 4)
I5 * I4 + VIN
IB
q
2KT
The remaining transistors (Q6 to Q11) and diodes (D4 to D6)
form three current mirrors that produce an output current equal
to I5 minus I4. Thus:
VIN IB
q
2KT +
IO
(eq. 5)
The term
IB
q
2KT
is then the transconductance of the amplifier
and is proportional to IB.
Figure 21. Circuit Diagram of NE5517
V+
11
D4
Q6
Q7
2,15
D2
Q4
Q5
D3
INPUT
4,13
+INPUT
3,14
AMP BIAS
INPUT
1,16
Q2
Q1
D1
V
6
Q10
D6
Q11
VOUTPUT
5,12
Q9
Q8
D5
Q14
Q15
Q16
R1
D7
D8
Q3
7,10
Q12
Q13
8,9
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