参数资料
型号: NE5517NG
厂商: ON Semiconductor
文件页数: 9/15页
文件大小: 0K
描述: IC AMP XCONDUCTANCE DUAL 16-DIP
标准包装: 25
放大器类型: 跨导
电路数: 2
输出类型: 推挽式
转换速率: 50 V/µs
增益带宽积: 2MHz
电流 - 输入偏压: 400nA
电压 - 输入偏移: 400µV
电流 - 电源: 2.6mA
电流 - 输出 / 通道: 650µA
电压 - 电源,单路/双路(±): 4 V ~ 44 V,±2 V ~ 22 V
工作温度: 0°C ~ 70°C
安装类型: 通孔
封装/外壳: 16-DIP(0.300",7.62mm)
供应商设备封装: 16-DIP
包装: 管件
NE5517, NE5517A, AU5517
http://onsemi.com
3
NOTE: V+ of output buffers and amplifiers are internally connected.
B
AMP
BIAS
INPUT
B
DIODE
BIAS
B
INPUT
(+)
B
INPUT
()
B
OUTPUT
V+ (1)
B
BUFFER
INPUT
B
BUFFER
OUTPUT
AMP
BIAS
INPUT
DIODE
BIAS
INPUT
(+)
INPUT
()
OUTPUT
V
BUFFER
INPUT
BUFFER
OUTPUT
A
AA
A
123
4
5
6
7
8
16
15
14
13
12
11
10
9
+
B
+
A
Figure 2. Connection Diagram
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (Note 1)
VS
44 VDC or ±22
V
Power Dissipation, Tamb = 25 °C (Still Air) (Note 2)
NE5517N, NE5517AN
NE5517D, AU5517D
PD
1500
1125
mW
Thermal Resistance, JunctiontoAmbient
D Package
N Package
RqJA
140
94
°C/W
Differential Input Voltage
VIN
±5.0
V
Diode Bias Current
ID
2.0
mA
Amplifier Bias Current
IABC
2.0
mA
Output Short-Circuit Duration
ISC
Indefinite
Buffer Output Current (Note 3)
IOUT
20
mA
Operating Temperature Range
NE5517N, NE5517AN
AU5517T
Tamb
0 °C to +70 °C
40 °C to +125 °C
°C
Operating Junction Temperature
TJ
150
°C
DC Input Voltage
VDC
+VS to VS
Storage Temperature Range
Tstg
65 °C to +150 °C
°C
Lead Soldering Temperature (10 sec max)
Tsld
230
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For selections to a supply voltage above ±22 V, contact factory.
2. The following derating factors should be applied above 25 °C
N package at 10.6 mW/°C
D package at 7.1 mW/°C.
3. Buffer output current should be limited so as to not exceed package dissipation.
相关PDF资料
PDF描述
208457064012025 CONNECTOR RECEPT 64POS STR
RNCP1206FTD1K50 RES 1.5K OHM 1/2W 1% 1206 SMD
NCV33274ADG IC OPAMP QUAD HS BIPO 14-SOIC
1V5KE27CA TVS BIDIRECT 27V 1500W DO201AE
108457032005025 CONN HEADER MALE 32POS STR SMD
相关代理商/技术参数
参数描述
NE5520279A 功能描述:射频MOSFET电源晶体管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
NE5520279A-A 功能描述:射频MOSFET电源晶体管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
NE5520279A-EVPW04 功能描述:射频开发工具 Silicon Medium Pwr LDMOS RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
NE5520279A-EVPW09 功能描述:射频开发工具 For NE5520279A-A Power at 900 MHz RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V
NE5520279A-EVPW24 功能描述:射频开发工具 For NE5520279A-A Power at 2.4 GHz RoHS:否 制造商:Taiyo Yuden 产品:Wireless Modules 类型:Wireless Audio 工具用于评估:WYSAAVDX7 频率: 工作电源电压:3.4 V to 5.5 V