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| 型号： | NE5520279A-EVPW24 |
| 厂商： | CEL |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE5520279A 2.4GHZ |
| 标准包装： | 1 |
| 类型： | MOSFET |
| 频率： | 2.4GHz |
| 适用于相关产品： | NE5520279@2.4GHz |
| 已供物品： | 板 |
SILICON POWER MOS FET
NE5520279A
3.2 V OPERATION SILICON RF POWER LDMOS FET
FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the
transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
(our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0
dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.
FEATURES
? High output power
: P out = 32.0 dBm TYP. (V DS = 3.2 V, I Dset = 700 mA, f = 1.8 GHz, P in = 25 dBm)
? High power added efficiency : ? add = 45% TYP. (V DS = 3.2 V, I Dset = 700 mA, f = 1.8 GHz, P in = 25 dBm)
? High linear gain
? Surface mount package
? Single supply
APPLICATION
? Digital cellular phones
: G L = 10 dB TYP. (V DS = 3.2 V, I Dset = 700 mA, f = 1.8 GHz, P in = 5 dBm)
: 5.7 ? 5.7 ? 1.1 mm MAX.
: V DS = 2.8 to 6.0 V
: 3.2 V DCS1800 Handsets
ORDERING INFORMATION
Part Number
NE5520279A-T1
Package
79A
Marking
A2
Supplying Form
? 12 mm wide embossed taping
? Gate pin face the pe rforation side of the tape
? Qty 1 kpcs/reel
NE5520279A-T1A
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5520279A-A
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10123EJ03V0DS (3rd edition)
Date Published July 2003 CP(K)
The mark ? shows major revised points.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE5520279A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R |
| NE5520279A-T1-A | 功能描述:射频MOSFET电源晶体管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5520379A | 功能描述:射频MOSFET电源晶体管 L&S Band LD-MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5520379A-A | 功能描述:射频MOSFET电源晶体管 L&S Band LD-MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5520379A-EVPW04 | 功能描述:射频模块 Silicon Medium Pwr LDMOS RoHS:否 制造商:Linx Technologies 产品:Transceiver Modules 频带:902 MHz to 928 MHz 输出功率:- 15.5 dBm to + 12.5 dBm 接口类型:UART 工作电源电压:- 0.3 VDC to + 5.5 VDC 传输供电电流:38.1 mA 接收供电电流:22.7 mA 天线连接器类型:U.FL 最大工作温度:+ 85 C 尺寸:1.15 mm x 0.63 mm x 0.131 mm |
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