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参数资料
| 型号： | NE5520279A-EVPW24 |
| 厂商： | CEL |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE5520279A 2.4GHZ |
| 标准包装： | 1 |
| 类型： | MOSFET |
| 频率： | 2.4GHz |
| 适用于相关产品： | NE5520279@2.4GHz |
| 已供物品： | 板 |
NE5520279A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
methods and conditions other than those recommended below, contact your nearby sales office.
For soldering
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
VPS
Wave Soldering
Partial Heating
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220 ? C or higher
Preheating time at 120 to 180 ? C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Peak temperature (package surface temperature)
Time at temperature of 200 ? C or higher
Preheating time at 120 to 150 ? C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Peak temperature (molten solder temperature)
Time at peak temperature
Preheating temperature (package surface temperature)
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
Peak temperature (pin temperature)
Soldering time (per pin of device)
Maximum chlorine content of rosin flux (% mass)
: 260 ? C or below
: 10 seconds or less
: 60 seconds or less
: 120 ? 30 seconds
: 3 times
: 0.2%(Wt.) or below
: 215 ? C or below
: 25 to 40 seconds
: 30 to 60 seconds
: 3 times
: 0.2%(Wt.) or below
: 260 ? C or below
: 10 seconds or less
: 120 ? C or below
: 1 time
: 0.2%(Wt.) or below
: 350 ? C or below
: 3 seconds or less
: 0.2%(Wt.) or below
IR260
VP215
WS260
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10123EJ03V0DS
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE5520279A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 15V 0.6A 4-Pin Case 79A T/R |
| NE5520279A-T1-A | 功能描述:射频MOSFET电源晶体管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5520379A | 功能描述:射频MOSFET电源晶体管 L&S Band LD-MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5520379A-A | 功能描述:射频MOSFET电源晶体管 L&S Band LD-MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| NE5520379A-EVPW04 | 功能描述:射频模块 Silicon Medium Pwr LDMOS RoHS:否 制造商:Linx Technologies 产品:Transceiver Modules 频带:902 MHz to 928 MHz 输出功率:- 15.5 dBm to + 12.5 dBm 接口类型:UART 工作电源电压:- 0.3 VDC to + 5.5 VDC 传输供电电流:38.1 mA 接收供电电流:22.7 mA 天线连接器类型:U.FL 最大工作温度:+ 85 C 尺寸:1.15 mm x 0.63 mm x 0.131 mm |
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