参数资料
| 型号： | NE57811S/N1,518 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 2/13页 |
| 文件大小： | 0K |
| 描述： | IC DDR TERMINATION SPAK-5 |
| 标准包装： | 2,000 |
| 应用： | 转换器，DDR，DDR2 |
| 输入电压： | 1.6 V ~ 3.6 V |
| 输出数： | 1 |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SPAK-5 |
| 供应商设备封装： | 5-SPAK |
| 包装： | 带卷 (TR) |
| 其它名称： | 935284748518 NE57811S/N1-T NE57811S/N1-T-ND |
Philips Semiconductors
Advanced DDR memory termination power
with shutdown
DESCRIPTION
The NE57811 is designed to provide power for termination of a
Double Data Rate (DDR) SDRAM memory bus. It significantly
reduces parts count, board space, and overall system cost
compared to previous solutions.
The NE57811 DDR termination regulator maintains an output
voltage (DDR reference bus voltage) that is one-half that of the RAM
supply voltage. It is capable of providing up to ± 3.5 A for sustained
periods. Overcurrent limiting protects the NE57811 from inrush
currents at start-up, and overtemperature shutdown protects the
device in extreme temperature situations.
The SPAK-5 (SOT756) package is thermally robust for flexibility of
thermal design. Because the NE57811 is a linear regulator, no
external inductors or switching FETs are necessary. Fast response
to load changes reduces the need for output capacitors.
Product data
NE57811
FEATURES
? Fast transient response time
? Overtemperature protection
? Overcurrent protection
? Commercial (0 ° C to +70 ° C) temperature range
? Reduced need for external components
(switching FETs, inductors, decoupling capacitors)
? Internal divider maintains termination voltage at 1 / 2 memory
supply voltage
? Reference out for other memory and control components
? Shutdown pin that may be used to put the device into low power
mode
? Compatible with DDR-I (V DD = 2.5 V) or DDR-II (V DD = 1.8 V)
SDRAM systems
SIMPLIFIED SYSTEM DIAGRAM
DIMM0
APPLICATIONS
? Desktop microcomputer systems
? Workstations
? Servers
? Game machines
? Set top boxes
? Embedded systems
? Digital video recorders
DIMM1
RefOut
SHTDWN
(optional)
0.1 μ F
Control & Address
V TT
MEMORY
CONTROLLER
R S
20 ? (typical)
Data
R T
27 ? (typical)
100 μ F
NE57811
TERMINATION
POWER
SL01690
Figure 1. Simplified system diagram.
2003 Apr 02
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE57814 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:DDR memory termination regulator with standby mode and enhanced efficiency |
| NE57814DD | 制造商:NXP Semiconductors 功能描述: 制造商:NXP Semiconductors 功能描述:DDR TERM W/STANDBY 8SOIC |
| NE57814DD,518 | 功能描述:线性稳压器 - 标准 DDR TERMINATOR REG RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
| NE57814DD518 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| NE57835 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 30MA I(C) | SOT-173 |
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