参数资料
型号: NE57811S/N1,518
厂商: NXP Semiconductors
文件页数: 3/13页
文件大小: 0K
描述: IC DDR TERMINATION SPAK-5
标准包装: 2,000
应用: 转换器,DDR,DDR2
输入电压: 1.6 V ~ 3.6 V
输出数: 1
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: SPAK-5
供应商设备封装: 5-SPAK
包装: 带卷 (TR)
其它名称: 935284748518
NE57811S/N1-T
NE57811S/N1-T-ND

Philips Semiconductors
Advanced DDR memory termination power
with shutdown
ORDERING INFORMATION
Product data
NE57811
TYPE NUMBER
NE57811S
PACKAGE
NAME
SPAK-5
DESCRIPTION
plastic single-ended surface mounted package; 5 leads
VERSION
SOT756
TEMPERATURE
RANGE
0 ° C to +70 ° C
Part number marking
The package is marked with the part number under the logo. The
second line indicates wafer lot number. The first four characters of
the third line contain a date code. The remaining characters are
manufacturing codes.
PIN CONFIGURATION
PIN DESCRIPTION
PIN
1
2
3
4
5
SYMBOL
V TT
V DD
V SS
SHTDWN
RefOut
DESCRIPTION
Regulated terminator voltage
Power supply
Circuit ground (Note 1)
Shutdown
Reference voltage out
NOTE:
1. The thermal backside pad connects electrically to V SS internally
and provides enhancement to thermal conductivity, but it should
not be used as the primary connection to ground. Device
specifications apply to use of the V SS pin as the connection to
1
2
3
4
5
ground.
SL01691
Figure 2. Pin configuration.
MAXIMUM RATINGS
SYMBOL
V DD
T amb
T stg
T j
R th(j-a)
P D
PARAMETER
V DD to V SS voltage
Operating ambient temperature
Storage temperature
Junction temperature
Thermal resistance, junction to ambient
Power dissipation (Note 1)
MIN.
–0.3
0
–40
TYP.
16.5
MAX.
+3.6
+70
+165
160
3.3
UNIT
V
° C
° C
° C
° C/W
W
NOTE:
1. Tested on a minimum footprint on a four-layer PCB per JEDEC specification JESD51-7.
2003 Apr 02
3
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