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参数资料
| 型号： | NE6510179A-EVPW35 |
| 厂商： | CEL |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE6510179A 3.5GHZ |
| 标准包装： | 1 |
| 类型： | FET |
| 频率： | 1.9GHz |
| 适用于相关产品： | NE6510179A@3.5GHz |
| 已供物品： | 板 |
NE6510179A
TYPICAL RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (T C
= 25 ° C)
SYMBOLS
CHARACTERISTICS
UNITS
MIN
TYP
MAX
TEST CONDITIONS
P OUT
Output Power
dBm
35.0
G L
Linear Gain 1
dB
10.0
f = 1900 MHz, V DS = 5.0 V,
Pin = +25 dBm, Rg = 100 ?
η ADD
Power Added Efficiency
%
56
I DSQ = 200 mA (RF OFF)
I D
P OUT
Drain Current
Output Power
A
dBm
1.2
31.5
f = 900 MHz, V DS = 3.5 V,
G L
η ADD
I D
Linear Gain 1
Power Added Efficiency
Drain Current
dB
%
A
15.0
70
0.53
Pin = +20 dBm, Rg = 100 ?
I DSQ = 200 mA (RF OFF)
Notes:
1. Pin = 0 dBm
ABSOLUTE MAXIMUM RATINGS 1 (T C = 25 ° C)
RECOMMENDED OPERATING LIMITS
SYMBOLS
V DS
V GS
I DS
PARAMETERS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
UNITS
V
V
A
RATINGS
8
-4
2.8
SYMBOLS
V DS
T CH
G COMP
PARAMETERS
Drain to Source Voltage
Channel Temperature
Gain Compression 1
UNITS
V
° C
dB
TYP
3.5
MAX
6.0
+125
3.0
I GS
P T
T CH
T STG
Gate Current (I GF , I GR )
Total Power Dissipation 2
Channel Temperature
Storage Temperature
mA
W
° C
° C
± 25
15
150
-65 to +150
Note:
1. Recommended maximum gain compression is 3.0 dB at
V DS > 4.2 V.
ORDERING INFORMATION
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
15
R TH = 8 ° C/W
10
5
0
PART NUMBER
NE6510179A-T1-A
NE6510179A-A
QTY
1 K/Reel
Bulk, 100 piece min.
25 ° C
50
100
150
Case Temperature, T C ( ° C)
相关PDF资料 |
PDF描述 |
|---|---|
| NE651R479A-EVPW35 | EVAL BOARD NE651R479A 3.5GHZ |
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| NHD-TS-12864ARNB# | TOUCH PANEL 82X50.2MM 4-WIRE |
| NHD-TS-12864CRNA# | TOUCH PANEL 71.3X55MM 4-WIRE |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE6510179A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET 8V 2.8A 4-Pin SMT T/R |
| NE6510179A-T1-A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6510379A | 制造商:NEC 制造商全称:NEC 功能描述:3 W L-BAND POWER GaAs HJ-FET |
| NE6510379A-T1 | 制造商:NEC 制造商全称:NEC 功能描述:3 W L-BAND POWER GaAs HJ-FET |
| NE651R479A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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