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参数资料
| 型号： | NE6510179A-EVPW35 |
| 厂商： | CEL |
| 文件页数： | 9/10页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE6510179A 3.5GHZ |
| 标准包装： | 1 |
| 类型： | FET |
| 频率： | 1.9GHz |
| 适用于相关产品： | NE6510179A@3.5GHz |
| 已供物品： | 板 |
NE6510179A
NONLINEAR MODEL
SCHEMATIC
Q1
RDX
0.2 ohms
LD
0.65 nH
LDX
0.01 nH
DRAIN
LGX
LG
GATE
0.001 nH
0.75 nH
CGS PKG
RDBX
400 ohms
CBSX
100 pF
CDS PKG
0.1 pF
0.1 pF
RSX
0.05 ohms
LSX
0.001 nH
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
UNITS
Parameters
VTO
VTOSC
ALPHA
Q1
-0.756
0
2
Parameters
RG
RD
RS
Q1
0.05
0.001
0.001
Parameter
capacitance
inductance
resistance
Units
picofarads
nanohenries
ohms
BETA
GAMMA
GAMMADC (2)
Q
DELTA
VBI
IS
N
RIS
2.245
0
0.01
1.7
0
0.6
1e-16
1
0
RGMET
KF
AF
TNOM
XTI
EG
VTOTC
BETATCE
FFE
0
0
1
27
3
1.43
0
0
1
MODEL RANGE
Frequency: 0.5 to 4 GHz
Bias: V DS = 2.2 V to 5 V, I D = 150 mA to 300 mA
Date: 3/29/2000
RID
TAU
CDS
RDB
CBS
CGSO (3)
CGDO (4)
DELTA1
DELTA2
FC
VBR
0
10e-12
0.5e-12
0.001
0
20e-12
4e-12
0.3
0.2
0.5
Infinity
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC GAMMA
(3) CGSO CGS
(4) CGDO CGD
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
11/04/2002
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| NE651R479A-EVPW35 | EVAL BOARD NE651R479A 3.5GHZ |
| NHD-COG14-36 | ADAPTER SMT TO 2.54MM THRU-HOLE |
| NHD-TS-12864ARNB# | TOUCH PANEL 82X50.2MM 4-WIRE |
| NHD-TS-12864CRNA# | TOUCH PANEL 71.3X55MM 4-WIRE |
| NHD-TS-240128BRNA# | TOUCH PANEL 128X74MM 4-WIRE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE6510179A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET 8V 2.8A 4-Pin SMT T/R |
| NE6510179A-T1-A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6510379A | 制造商:NEC 制造商全称:NEC 功能描述:3 W L-BAND POWER GaAs HJ-FET |
| NE6510379A-T1 | 制造商:NEC 制造商全称:NEC 功能描述:3 W L-BAND POWER GaAs HJ-FET |
| NE651R479A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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