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参数资料
| 型号： | NE6510179A-EVPW35 |
| 厂商： | CEL |
| 文件页数： | 7/10页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE6510179A 3.5GHZ |
| 标准包装： | 1 |
| 类型： | FET |
| 频率： | 1.9GHz |
| 适用于相关产品： | NE6510179A@3.5GHz |
| 已供物品： | 板 |
NE6510179A
TYPICAL APPLICATION CIRCUIT PERFORMANCE at V DS = 3 V and V DS = 5 V
PAE & GAIN
vs. OUTPUT POWER
PAE & GAIN
vs. OUTPUT POWER
14
60
14
F C = 1.96 GHz, V DS = 5V
50
45
12
50
12
40
10
8
6
4
40
30
20
10
8
6
4
35
30
25
20
15
2
Gain, I DSQ = 200 mA
Gain, I DSQ = 600 mA
PAE, I DSQ = 200 mA
10
2
Gain, I DSQ = 200 mA
Gain, I DSQ = 600 mA
PAE, I DSQ = 200 mA
PAE, I DSQ = 600 mA
10
5
0
20
F C = 1.96 GHz, V DS = 3V
22 24 26 28
PAE, I DSQ = 600 mA
30 32
34
0
0
20
22
24
26
28
30
32
34
0
36
Output Power, P OUT (dBm)
GAIN & SATURATED POWER
vs. FREQUENCY
Output Power, P OUT (dBm)
GAIN & SATURATED POWER
vs. FREQUENCY
16
14
12
10
P OUT = 16 dB for Gain
Gain, I DSQ = 100 mA
Gain, I DSQ = 800 mA
33
32
31
30
16
14
12
10
P OUT = 16 dB for Gain
29 dB for P SAT
Gain, I DSQ = 100 mA
Gain, I DSQ = 800 mA
36
35
34
33
8
29 dB for P SAT
V DS = 3 V
P OUT , I DSQ = 100 mA
P OUT , I DSQ = 800 mA
29
8
V DS = 5 V
P OUT , I DSQ = 100 mA
P OUT , I DSQ = 800 mA
32
1.90
1.92
1.94
1.96
1.98
2.00
2.02
1.91
1.92
1.94
1.96
1.98
2.00
2.02
Frequency, f (GHz)
THIRD ORDER INTERMODULATION
vs. TOTAL OUTPUT POWER
Frequency, f (GHz)
THIRD ORDER INTERMODULATION
vs. TOTAL OUTPUT POWER
15
20
F C = 1.96 GHz, P OUT = Each Tone
V DS = 3 V
15
20
I DSQ = 100 mA
I DSQ = 200 mA
I DSQ = 400 mA
I DSQ = 600 mA
I DSQ = 800 mA
25
30
35
25
30
35
40
I DSQ = 100 mA
I DSQ = 200 mA
I DSQ = 400 mA
I DSQ = 600 mA
40
F C = 1.96 GHz, P OUT = Each Tone
V DS = 5 V
45
20
21
22
23
24
25
26
27
I DSQ = 800 mA
28 29 30
45
20
21
22
23
24
25
26
27
28
29
30
Total Output Power, P OUT (dBm)
Total Output Power, P OUT (dBm)
相关PDF资料 |
PDF描述 |
|---|---|
| NE651R479A-EVPW35 | EVAL BOARD NE651R479A 3.5GHZ |
| NHD-COG14-36 | ADAPTER SMT TO 2.54MM THRU-HOLE |
| NHD-TS-12864ARNB# | TOUCH PANEL 82X50.2MM 4-WIRE |
| NHD-TS-12864CRNA# | TOUCH PANEL 71.3X55MM 4-WIRE |
| NHD-TS-240128BRNA# | TOUCH PANEL 128X74MM 4-WIRE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NE6510179A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET 8V 2.8A 4-Pin SMT T/R |
| NE6510179A-T1-A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE6510379A | 制造商:NEC 制造商全称:NEC 功能描述:3 W L-BAND POWER GaAs HJ-FET |
| NE6510379A-T1 | 制造商:NEC 制造商全称:NEC 功能描述:3 W L-BAND POWER GaAs HJ-FET |
| NE651R479A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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