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参数资料
| 型号： | NE651R479A-EVPW35 |
| 厂商： | CEL |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE651R479A 3.5GHZ |
| 标准包装： | 1 |
| 类型： | FET |
| 频率： | 1.9GHz |
| 适用于相关产品： | NE651R479A@3.5GHz |
| 已供物品： | 板 |
NE651R479A
TYPICAL 3.5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (T C
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX
= 25°C)
TEST CONDITIONS
P OUT
G L
η ADD
I D
Output Power
Linear Gain 1
Power Added Efficiency
Drain Current
dBm
dB
%
mA
27.0
14.0
60
230
f = 900 MHz, V DS =3.5 V
P IN = +13 dBm, R G = 1 k Ω ,
I DSQ = 50 mA (RF OFF)
P T Total Power Dissipation W 2.5
G COMP Gain Compression dB 3.0
ABSOLUTEMAXIMUMRATINGS 1 (T A =25°C)
SYMBOLS PARAMETERS UNITS RATINGS
V DS Drain to Source Voltage V 8
V GS Gate to Source Voltage V -4
I DS Drain Current A 1.0
I GF Gate Forward Current mA 10
I GR Gate Reverse Current mA 10
2
T CH Channel Temperature °C 150
T STG Storage Temperature °C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm double copper clad epoxy glass
PWB. T A = +85°C
RECOMMENDED OPERATING LIMITS
SYMBOL PARAMETER UNITS MIN TYP MAX
V DS Drain to Source Voltage V 3.5 6.0
1
T CH Channel Temperature °C +125
Note:
1. Recommended maximum gain compression is 3.0 dB at
V DS = 4.2 to 5.5 V.
ORDERING INFORMATION
PART NUMBER QTY
NE651R479A-T1-A 1 kpcs/Reel
NE651R479A-A Bulk, 100 Pcs. Min.
Note:
1. Embossed Tape, 12 mm wide.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE651R479A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 8V 1A 4-Pin Case 79A T/R |
| NE651R479A-T1-A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE652N | 制造商:Panasonic Industrial Company 功能描述:IC |
| NE657N | 制造商:Panasonic Industrial Company 功能描述:DISCD I.C. |
| NE661M04 | 功能描述:射频双极小信号晶体管 USE 551-NE661M04-A RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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