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参数资料
| 型号： | NE651R479A-EVPW35 |
| 厂商： | CEL |
| 文件页数： | 9/11页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD NE651R479A 3.5GHZ |
| 标准包装： | 1 |
| 类型： | FET |
| 频率： | 1.9GHz |
| 适用于相关产品： | NE651R479A@3.5GHz |
| 已供物品： | 板 |
NE651R479A
RECOMMENDED P.C.B. LAYOUT (Units in mm)
4.0
1.7
Drain
Gate
5.9
1.2
0.5
Source
0.5
0.5
1.0
through hole ? 0.2X33
RECOMMENDED SOLDERING CONDITIONS 1
6.1
This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recom-
mended below, contact your CEL sales representative.
SOLDERING METHOD
Infrared Reflow
Partial Heating
SOLDERING CONDITIONS
Package peak temperature: 235 ?C or below
Time: 30 seconds or less (at 210 ?C)
Count: 2, Exposure limit: none
PIN temperature: 260 ?C
RECOMMENDED
CONDITION SYMBOL
IR35-00-2
-
Time: 5 seconds or less (per pin row)
Exposure limit: none
Note:
1. Caution: Do not use different soldering methods together (except for partial heating).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE651R479A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans JFET N-CH 8V 1A 4-Pin Case 79A T/R |
| NE651R479A-T1-A | 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE652N | 制造商:Panasonic Industrial Company 功能描述:IC |
| NE657N | 制造商:Panasonic Industrial Company 功能描述:DISCD I.C. |
| NE661M04 | 功能描述:射频双极小信号晶体管 USE 551-NE661M04-A RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:NPN 最大工作频率:7000 MHz 集电极—发射极最大电压 VCEO:15 V 发射极 - 基极电压 VEBO:2 V 集电极连续电流:0.15 A 功率耗散:1000 mW 直流集电极/Base Gain hfe Min: 最大工作温度:+ 150 C 封装 / 箱体:SOT-223 封装:Reel |
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