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参数资料
| 型号： | NID5003NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR HD+ 20A 42V ESD DPAK |
| 标准包装： | 1 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 42 毫欧 |
| 电流 - 峰值输出： | 20A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | NID5003NT4GOSDKR |
NID5003N
Preferred Device
Self-Protected FET
with Temperature and
Current Limit
42 V, 20 A, Single N ? Channel, DPAK
HDPlus t devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on ? resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain ? to ? Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
V DSS
(Clamped)
42 V
http://onsemi.com
R DS(on) TYP
42 m W @ 10 V
I D MAX
(Limited)
20 A*
Drain
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate ? to ? Source Clamp.
Features
? Short Circuit Protection/Current Limit
? Thermal Shutdown with Automatic Restart
? I DSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Slew Rate Control for Low Noise Switching
? Overvoltage Clamped Protection
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
Drain ? to ? Source Voltage Internally Clamped V DSS 42
Vdc
Gate
Input
Overvoltage
Protection
R G
ESD Protection
Temperature Current
Limit Limit
M PWR
Current
Sense
Source
MARKING
DIAGRAM
Gate ? to ? Source Voltage
Drain Current
Total Power Dissipation
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
Continuous
V GS
I D
P D
" 14 Vdc
Internally Limited
W
1.3
2.3
DPAK
CASE 369C
STYLE 2
D5003N = Device Code
1
3
YWW
2 D
5003NG
1 = Gate
Thermal Resistance
Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
R q JC
R q JA
R q JA
3.0
95
54
° C/W
Y
WW
G
= Year
= Work Week
= Pb ? Free Device
2 = Drain
3 = Source
Single Pulse Drain ? to ? Source Avalanche
Energy
E AS
400
mJ
ORDERING INFORMATION
(V DD = 25 Vdc, V GS = 5.0 Vdc,
I L = 2.6 Apk, L = 120 mH, R G = 25 W )
Operating and Storage Temperature Range
(Note 3)
T J , T stg
? 55 to
150
° C
Device
NID5003NT4
NID5003NT4G
Package
DPAK
DPAK
Shipping ?
2500/Tape & Reel
2500/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412 ″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1 ″ square pad size (1.127 ″ square) FR4 PCB, 1 oz cu.
3. Normal pre ? fault operating range. See thermal limit range conditions.
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
*Max current may be limited below this value
depending on input conditions.
? Semiconductor Components Industries, LLC, 2008
September, 2008 ? Rev. 6
1
Publication Order Number:
NID5003N/D
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