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| 型号： | NID5003NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR HD+ 20A 42V ESD DPAK |
| 标准包装： | 1 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 42 毫欧 |
| 电流 - 峰值输出： | 20A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 其它名称： | NID5003NT4GOSDKR |
NID5003N
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Clamped Breakdown Voltage
(V GS = 0 Vdc, I D = 250 m Adc)
(V GS = 0 Vdc, I D = 250 m Adc, T J = ? 40 ° C to 150 ° C)
Zero Gate Voltage Drain Current
(V DS = 32 Vdc, V GS = 0 Vdc)
(V DS = 32 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate Input Current
(V GS = 5.0 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSSF
42
40
?
?
?
46
45
0.6
2.5
50
51
51
5.0
?
125
Vdc
m Adc
m Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = 1.2 mAdc)
Threshold Temperature Coefficient
Static Drain ? to ? Source On ? Resistance (Note 4)
(V GS = 10 Vdc, I D = 3.0 Adc, T J @ 25 ° C)
(V GS = 10 Vdc, I D = 3.0 Adc, T J @ 150 ° C)
Static Drain ? to ? Source On ? Resistance (Note 4)
(V GS = 5.0 Vdc, I D = 3.0 Adc, T J @ 25 ° C)
(V GS = 5.0 Vdc, I D = 3.0 Adc, T J @ 150 ° C)
Source ? Drain Forward On Voltage
(I S = 7.0 A, V GS = 0 V)
V GS(th)
R DS(on)
R DS(on)
V SD
1.0
?
?
?
?
?
?
1.7
5.0
42
76
50
88
0.95
2.2
?
51
104
58
125
1.1
Vdc
? mV/ ° C
m W
m W
V
SWITCHING CHARACTERISTICS
Turn ? on Time
(V in to 90% I D )
Turn ? off Time
(V in to 10% I D )
Slew Rate On
Slew Rate Off
R L = 4.7 W, V in = 0 to 10 V, V DD = 12 V
R L = 4.7 W, V in = 0 to 10 V, V DD = 12 V
R L = 4.7 W , V in = 0 to 10 V, V DD = 12 V
R L = 4.7 W , V in = 10 to 0 V, V DD = 12 V
T (on)
T (off)
? dV DS /dt on
dV DS /dt off
?
?
?
?
16
80
1.4
0.5
20
100
?
?
m s
V /m s
V /m s
SELF PROTECTION CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (Note 5)
Current Limit
Current Limit
Temperature Limit (Turn ? off)
Thermal Hysteresis
Temperature Limit (Turn ? off)
Thermal Hysteresis
(V GS = 5.0 Vdc)
V DS = 10 V (V GS = 5.0 Vdc, T J = 150 ° C)
(V GS = 10 Vdc)
V DS = 10 V (V GS = 10 Vdc, T J = 150 ° C)
V GS = 5.0 Vdc
V GS = 5.0 Vdc
V GS = 10 Vdc
V GS = 10 Vdc
I LIM
I LIM
T LIM(off)
D T LIM(on)
T LIM(off)
D T LIM(on)
12
7
18
13
150
?
150
?
18
13
22
18
175
15
165
15
24
18
30
25
200
?
185
?
Adc
° C
° C
° C
° C
ESD ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Electro ? Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
400
?
?
?
?
V
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
http://onsemi.com
2
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