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参数资料
| 型号： | NID9N05CLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH CLAMP 9A 52V DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 10 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 153 毫欧 |
| 电流 - 峰值输出： | 9A |
| 工作温度： | -55°C ~ 175°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NID9N05CLT4GOSDKR |
NID9N05CL, NID9N05ACL
Power MOSFET
9.0 A, 52 V, N ? Channel, Logic Level,
Clamped MOSFET w/ESD Protection
in a DPAK Package
http://onsemi.com
Benefits
? High Energy Capability for Inductive Loads
? Low Switching Noise Generation
V DSS
(Clamped)
52 V
R DS(ON) TYP
90 m W
I D MAX
(Limited)
9.0 A
Features
?
?
?
?
?
?
?
Diode Clamp Between Gate and Source
ESD Protection ? HBM 5000 V
Active Over ? Voltage Gate to Drain Clamp
Scalable to Lower or Higher R DS(on)
Internal Series Gate Resistance
AEC ? Q101 Qualified and PPAP Capable
These Devices are Pb ? Free and are RoHS Compliant
Gate
(Pin 1)
Overvoltage
Protection
R G
ESD Protection
Drain
(Pins 2, 4)
M PWR
Applications
? Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
Source
(Pin 3)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Value
Unit
MARKING
DIAGRAM
Drain ? to ? Source Voltage Internally Clamped
V DSS
52 ? 59
V
Gate ? to ? Source Voltage ? Continuous
V GS
± 15
V
1
YWW
Drain Current ? Continuous @ T A = 25 ° C
Drain Current ? Single Pulse (t p = 10 m s)
Total Power Dissipation @ T A = 25 ° C
I D
I DM
P D
9.0
35
1.74
A
W
DPAK
CASE 369C
STYLE 2
3
2
D9N
xxxxxG
4
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 125 ° C
(V DD = 50 V, I D(pk) = 1.5 A, V GS = 10 V,
R G = 25 W )
T J , T stg
E AS
? 55 to 175
160
° C
mJ
Y
WW
xxxxx
G
= Year
= Work Week
= 05CL or 05ACL
= Pb ? Free Package
1
2
3
4
= Gate
= Drain
= Source
= Drain
Thermal Resistance, Junction ? to ? Case
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
R q JC
R q JA
R q JA
5.2
72
100
° C/W
ORDERING INFORMATION
(Pb ? Free)
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from Case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to a FR4 board using 1 ″ pad size, (Cu area 1.127 in 2 ).
2. When surface mounted to a FR4 board using minimum recommended pad
size, (Cu area 0.412 in 2 ).
Device Package Shipping ?
NID9N05CLG DPAK 75 Units/Rail
(Pb ? Free)
NID9N05CLT4G DPAK
2500/Tape & Reel
NID9N05ACLT4G
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
December, 2013 ? Rev. 10
1
Publication Order Number:
NID9N05CL/D
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