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参数资料
| 型号： | NID9N05CLT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH CLAMP 9A 52V DPAK |
| 产品目录绘图： | MOSFET DPAK Pkg |
| 标准包装： | 10 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 153 毫欧 |
| 电流 - 峰值输出： | 9A |
| 工作温度： | -55°C ~ 175°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NID9N05CLT4GOSDKR |
NID9N05CL, NID9N05ACL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted )
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 V, I D = 1.0 mA, T J = 25 ° C)
(V GS = 0 V, I D = 1.0 mA, T J = ? 40 ° C to 125 ° C)
Temperature Coefficient (Negative)
Zero Gate Voltage Drain Current
(V DS = 40 V, V GS = 0 V)
(V DS = 40 V, V GS = 0 V, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ± 8 V, V DS = 0 V)
(V GS = ± 14 V, V DS = 0 V)
V (BR)DSS
I DSS
I GSS
52
50.8
?
?
?
?
?
55
54
? 10
?
?
?
± 22
59
59.5
?
10
25
± 10
?
V
V
mV/ ° C
m A
m A
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 100 m A)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 4.0 V, I D = 1.5 A)
(V GS = 3.5 V, I D = 0.6 A)
(V GS = 3.0 V, I D = 0.2 A)
(V GS = 12 V, I D = 9.0 A)
(V GS = 12 V, I D = 12 A)
Forward Transconductance (Note 3) (V DS = 15 V, I D = 9.0 A)
V GS(th)
R DS(on)
g FS
1.3
?
?
?
?
70
67
?
1.75
? 4.5
153
175
?
90
95
24
2.5
?
181
364
1210
?
?
?
V
mV/ ° C
m W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
155
250
pF
Output Capacitance
Transfer Capacitance
(V DS = 40 V, V GS = 0 V, f = 10 kHz)
C oss
C rss
?
?
60
25
100
40
Input Capacitance
C iss
?
175
?
pF
Output Capacitance
Transfer Capacitance
(V DS = 25 V, V GS = 0 V, f = 10 kHz)
C oss
C rss
?
?
70
30
?
?
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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