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| 型号： | NIF5002NT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 42V 2A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 Product Discontinuation 20/Aug/2008 |
| 标准包装： | 4,000 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 165 毫欧 |
| 电流 - 峰值输出： | 2A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NIF5002NT3OS |
NIF5002N
Preferred Device
Self?Protected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N?Channel, SOT?223
http://onsemi.com
HDPlus t devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on?resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
V (BR)DSS
(Clamped)
42 V
R DS(ON) TYP
165 m W @ 10 V
I D MAX
2.0 A*
work together to provide short circuit protection. The devices feature
an integrated Drain?to?Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
*Max current limit value is dependent on input
condition.
Drain
Gate?to?Source Clamp.
Features
Gate
Input
R G
Overvoltage
Protection
M PWR
?
?
?
?
?
?
?
?
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I DSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb?Free Packages are Available
ESD Protection
Temperature
Limit
4
Current
Limit
SOT?223
Current
Sense
Source
Applications
? Lighting
? Solenoids
? Small Motors
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
1
2
CASE 318E
STYLE 3
3
MARKING DIAGRAM
1
Rating
Symbol
Value
Unit
GATE
4
Drain?to?Source Voltage Internally Clamped
Drain?to?Gate Voltage Internally Clamped
(R G = 1.0 M W )
Gate?to?Source Voltage
V DSS
V DGR
V GS
42
42
" 14
V
V
V
DRAIN
SOURCE
2
3
DRAIN
Continuous Drain Current
I D
Internally Limited
Power Dissipation
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
@ T T = 25 ° C (Note 3)
P D
1.1
1.7
8.9
W
A = Assembly Location
Y = Year
W = Work Week
Operating Junction and Storage Temperature
Single Pulse Drain?to?Source Avalanche Energy
T J , T stg
E AS
?55 to
150
150
° C
mJ
5002N = Specific Device Code
G = Pb?Free Package
(Note: Microdot may be in either location)
(V DD = 32 V, V G = 5.0 V, I PK = 1.0 A,
L = 300 mH, R G(ext) = 25 W )
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
Preferred devices are recommended choices for future use
and best overall value.
? Semiconductor Components Industries, LLC, 2006
April, 2006 ? Rev. 7
1
Publication Order Number:
NIF5002N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NIF5002NT3G | 功能描述:MOSFET NFET 1.4A 40V HD+ RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIF5003N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self−Protected FET with Temperature and Current Limit |
| NIF5003NT1 | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIF5003NT1G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NIF5003NT3 | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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