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| 型号： | NIF5002NT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 42V 2A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 Product Discontinuation 20/Aug/2008 |
| 标准包装： | 4,000 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 165 毫欧 |
| 电流 - 峰值输出： | 2A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NIF5002NT3OS |
NIF5002N
THERMAL CHARACTERISTICS
Characteristic
Junction?to?Ambient ? Steady State (Note 1)
Junction?to?Ambient ? Steady State (Note 2)
Junction?to?Tab ? Steady State (Note 3)
Symbol
R q JA
R q JA
R q JT
Value
114
72
14
Unit
° C/W
1. Surface?mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 ″ thick).
2. Surface?mounted onto 2 ″ sq. FR4 board (1 ″ sq., 1 oz. Cu, 0.06 ″ thick).
3. Surface?mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 ″ thick).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
(Note 4)
Zero Gate Voltage Drain Current
V (BR)DSS
I DSS
V GS = 0 V, I D = 10 mA
V GS = 0 V, V DS = 32 V
T J = 25 ° C
T J = 150 ° C
T J = 25 ° C
T J = 150 ° C
42
40
46
45
0.25
1.1
55
55
4.0
20
V
m A
Gate Input Current
I GSSF
V DS = 0 V, V GS = 5.0 V
50
100
m A
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
V GS(th)
V GS(th) /T J
V GS = V DS , I D = 150 m A
1.3
1.8
4.0
2.2
6.0
V
?mV/ ° C
Static Drain?to?Source On?Resistance
R DS(on)
V GS = 10 V, I D = 1.7 A
T J = 25 ° C
T J = 150 ° C
165
305
200
400
m W
V GS = 5.0 V, I D = 1.7 A
V GS = 5.0 V, I D = 0.5 A
T J = 25 ° C
T J = 150 ° C
T J = 25 ° C
T J = 150 ° C
195
360
190
350
230
460
230
460
Source?Drain Forward On Voltage
V SD
V GS = 0 V, I S = 7.0 A
1.0
V
SWITCHING CHARACTERISTICS
Turn?on Time
Turn?off Time
Slew Rate On
t d(on)
t d(off)
dV DS /dt on
V GS = 10 V, V DD = 12 V,
I D = 2.5 A, R L = 4.7 W ,
(10% V in to 90% I D )
R L = 4.7 W , V in = 0 to 10 V,
20
65
1.2
30
100
m s
V /m s
V DD = 12 V, 70% to 50%
Slew?Rate Off
dV DS /dt off
R L = 4.7 W , V in = 0 to 10 V,
0.5
V DD = 12 V, 50% to 70%
SELF PROTECTION CHARACTERISTIC S (T J = 25 ° C unless otherwise noted) (Note 5)
Current Limit
I LIM
V DS = 10 V, V GS = 5.0 V
T J = 25 ° C
T J = 150 ° C
3.1
2.0
4.7
3.2
6.3
4.3
A
V DS = 10 V, V GS = 10 V
T J = 25 ° C
T J = 150 ° C
3.8
2.8
5.7
4.3
7.6
5.7
Temperature Limit (Turn?off)
Temperature Limit (Circuit Reset)
Temperature Limit (Turn?off)
Temperature Limit (Circuit Reset)
T LIM(off)
T LIM(on)
T LIM(off)
T LIM(on)
V GS = 5.0 V
V GS = 5.0 V
V GS = 10 V
V GS = 10 V
150
135
150
135
175
160
165
150
200
185
185
170
° C
ESD ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Electro?Static Discharge Capability
ESD
Human Body Model (HBM)
4000
V
Machine Model (MM)
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
http://onsemi.com
2
400
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| NIF5003NT1G | 功能描述:MOSFET 42V 14A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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