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参数资料
| 型号： | NIF62514T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH HD+ 6A 40V SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 10 |
| 系列： | HDPlus™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 90 毫欧 |
| 电流 - 峰值输出： | 6A |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NIF62514T1GOSDKR |
NIF62514
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Drain ? to ? Gate Voltage Internally Clamped (R GS = 1.0 M W )
Gate ? to ? Source Voltage
Symbol
V DSS
V DGR
V GS
Value
40
40
" 16
Unit
Vdc
Vdc
Vdc
Drain Current
? Continuous @ T A = 25 ° C
? Continuous @ T A = 100 ° C
? Pulsed (t p ≤ 10 m s)
I D
I D
I DM
Internally Limited
Total Power Dissipation
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
@ T A = 25 ° C (Note 3)
Thermal Resistance,
Junction ? to ? Tab
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 25 Vdc, V GS = 5.0 Vdc, V DS = 40 Vdc, I L = 2.8 Apk, L = 80 mH, R G = 25 W )
Operating and Storage Temperature Range
P D
R q JT
R q JA
R q JA
E AS
T J , T stg
1.1
1.73
8.93
14
114
72.3
300
? 55 to 150
W
° C/W
mJ
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto min pad board.
2. Mounted onto 1 ″ pad board.
3. Mounted onto large heatsink.
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
2
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