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| 型号： | NIF9N05CLT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 52V 2.6A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 Product Discontinuation 20/Aug/2008 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 52V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 125 毫欧 @ 2.6A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 100µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 250pF @ 35V |
| 功率 - 最大： | 1.69W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NIF9N05CLT1OSCT |
NIF9N05CL, NIF9N05ACL
PACKAGE DIMENSIONS
SOT ? 223 (TO ? 261)
CASE 318E ? 04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
H E
e1
1
e
4
2
3
E
b
A
q
C
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H E
q
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0 °
MILLIMETERS
NOM MAX
1.63 1.75
0.06 0.10
0.75 0.89
3.06 3.20
0.29 0.35
6.50 6.70
3.50 3.70
2.30 2.40
0.94 1.05
??? ???
1.75 2.00
7.00 7.30
? 1 0 °
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0 °
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
???
0.069
0.276
?
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
???
0.078
0.287
1 0 °
0.08 (0003)
A1
L
L1
STYLE 3:
PIN 1.
GATE
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.
3.
4.
DRAIN
SOURCE
DRAIN
2.0
0.079
1.5
0.059
2.3
0.091
2.3
0.091
SCALE 6:1
6.3
0.248
mm
inches
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NIF9N05CL/D
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| NIF9N05CLT3G | 功能描述:MOSFET 52V 2.6A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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