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参数资料
| 型号： | NJ903L |
| 厂商： | InterFET Corporation |
| 英文描述： | Silicon Junction Field-Effect Transistor |
| 中文描述： | 硅结场效应晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 129K |
| 代理商： | NJ903L |
F-42
01/99
NJ903L Process
Silicon Junction Field-Effect Transistor
Low-Current
Low Gate Leakage Current
High Input Impedance
Absolute maximum ratings at 25C free-air temperature.
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Device in this Databook based on the NJ903L Process.
Datasheet
IF9030
At 25°C free air temperature:
NJ903L Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 20
– 25
V
IG = – 1 A, VDS = V
Reverse Gate Leakage Current
IGSS
– 5
– 500
pA
VGS = – 15V, VDS = V
Drain Saturation Current (Pulsed)
IDSS
5
500
mA
VDS = 10V, VGS = V
Gate Source Cutoff Voltage
VGS(OFF)
– 0.1
– 3
V
VDS = 10V, ID = 1 nA
Dynamic Electrical Characteristics
Input Capacitance
Ciss
50
pF
VDS = V, VGS = – 10V
f = 1 MHz
Feedback Capacitance
Crss
18
pF
VDS = V, VGS = – 10V
f = 1 MHz
Equivalent Noise Voltage
eN
0.5
nV/
√HZ V
DG = 4 V, ID = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
G
S-D
D-S
S-D
D-S
Die Size = 0.040" X 0.040"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
Databook.fxp
1/13/99 2:09 PM
Page F-42
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