参数资料
型号: NJ903L
厂商: InterFET Corporation
英文描述: Silicon Junction Field-Effect Transistor
中文描述: 硅结场效应晶体管
文件页数: 2/2页
文件大小: 129K
代理商: NJ903L
01/99
F-43
NJ903L Process
Silicon Junction Field-Effect Transistor
Gate Source Cutoff Voltage in Volts
Drain
Saturation
Current
in
mA
Drain Saturation Current as a Function of VGS(OFF)
Gate Source Cutoff Voltage in Volts
Transconductance
in
mS
Gfs as a Function of VGS(OFF)
0
– 0.5
– 1.0
– 1.5
– 2.0
250
200
150
100
250
100
150
100
50
Drain to Source Voltage in Volts
0
5
10
15
20
Drain
Current
in
mA
Drain Current as a Function of VDS
VGS = –2.0 V
VGS = –1.5 V
VGS = –1.0 V
VGS = –0.5 V
VGS = V
VGS(OFF) = 2.2 V
0
– 1
– 2
– 3
250
200
150
100
50
Drain Saturation Current in mA
Transconductance
in
mS
Gfs as a Function of IDSS
0
50
100
150
200
250
200
150
10
100
1K
10K
100K
4.0
3.0
2.0
1.0
Frequency in Hz
Noise
Voltage
in
nV/
√Hz
Noise as a Function of Frequency
IDSS = 65 mA
VDG = 4 V
ID = 5 mA
Gate Source Voltage in Volts
Capacitance
in
pF
Capacitance as a Function of Vgs
0
– 10
– 15
– 20
Crss
Ciss
80
60
40
20
Vds = 5 V
Databook.fxp
1/13/99 2:09 PM
Page F-43
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