参数资料
型号: NLSF3T125MNR2G
厂商: ON Semiconductor
文件页数: 2/6页
文件大小: 0K
描述: IC BUS BUFFER TRI-ST QUAD 16QFN
标准包装: 1
逻辑类型: 缓冲器/线路驱动器,非反相
元件数: 4
每个元件的位元数: 1
输出电流高,低: 8mA,8mA
电源电压: 2 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-VFQFN 裸露焊盘
供应商设备封装: 16-QFN(3x3)
包装: 剪切带 (CT)
其它名称: NLSF3T125MNR2GOSCT
NLSF3T125
http://onsemi.com
2
Figure 1. Logic Diagram
ActiveLow Output Enables
Y1
Y2
Y4
1
5
7
10
13
12
8
9
4
3
15
16
A1
OE1
A2
OE2
A3
OE3
A4
OE4
Y3
Figure 2. QFN 16 Pinout (Top View)
Y2 GND Y3
A3
A1
OE1VCC OE4
A4
Y4
Y1
NC
OE2
A2
NC
OE3
Exposed Pad (EP)
1
3
4
5
678
9
10
11
12
13
14
15
16
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VCC
DC Supply Voltage
0.5 to +7.0
V
Vin
DC Input Voltage
–0.5 to +7.0
V
Vout
DC Output Voltage
Output in 3State
High or Low State
–0.5 to +7.0
–0.5 to VCC + 0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current (VOUT < GND; VOUT > VCC)
±20
mA
Iout
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation in Still Air
QFN Packages
500
mW
Tstg
Storage Temperature
–65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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