参数资料
| 型号： | NLSF3T125MNR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | IC BUS BUFFER TRI-ST QUAD 16QFN |
| 标准包装： | 1 |
| 逻辑类型： | 缓冲器/线路驱动器，非反相 |
| 元件数： | 4 |
| 每个元件的位元数： | 1 |
| 输出电流高，低： | 8mA，8mA |
| 电源电压： | 2 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN（3x3） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NLSF3T125MNR2GOSCT |
NLSF3T125
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
TA = 25°C
TA 3 85°C
TA 3 125°C
Units
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Maximum Propagation
Delay, A to Y
VCC = 2.3 ± 0.3 V CL = 15 pF
1.0
14.5
16.9
1.0
18.1
1.0
19.2
ns
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
1.0
5.6
8.1
8.0
11.5
1.0
9.5
13.0
1.0
12.0
16.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
1.0
1.0
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
1.0
1.0
8.5
10.5
tPZL,
tPZH
Maximum Output
Enable TIme, OE to Y
VCC = 2.3 ± 0.3 V CL = 15 pF
1.0
14.8
16.2
1.0
17.4
1.0
19.3
ns
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1.0 kW
CL = 50 pF
1.0
5.4
7.9
8.0
11.5
1.0
9.5
13.0
1.0
11.5
15.0
ns
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1.0 kW
CL = 50 pF
1.0
3.6
5.1
5.1
7.1
1.0
6.0
8.0
1.0
7.5
9.5
tPLZ,
tPHZ
Maximum Output
Disable Time, OE to Y
VCC = 2.3 ± 0.3 V CL = 15 pF
1.0
15.4
18.0
1.0
19.8
1.0
22.0
ns
VCC = 3.3 ± 0.3 V CL = 50 pF
RL = 1.0 kW
1.0
9.5
13.2
1.0
15.0
1.0
18.0
ns
VCC = 5.0 ± 0.5 V CL = 50 pF
RL = 1.0 kW
1.0
6.1
8.8
1.0
10.0
1.0
12.0
ns
tOSLH,
tOSHL
OutputtoOutput Skew
VCC = 3.3 ± 0.3 V CL = 50 pF
(Note 1)
1.5
1.5
2.0
ns
VCC = 5.0 ± 0.5 V CL = 50 pF
(Note 1)
1.0
1.0
1.5
Cin
Maximum Input
Capacitance
4
10
10
10
pF
Cout
Maximum ThreeState
Output Capacitance
(Output in High Impedance
State)
6
pF
Typical @ 25°C, VCC = 5.0V
CPD
Power Dissipation Capacitance (Note 2)
15
pF
1. Parameter guaranteed by design. tOSLH = |tPLHm tPLHn|, tOSHL = |tPHLm tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC/4 (per buffer). CPD is used to determine the
noload dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 5.0 V)
Symbol
Characteristic
TA = 25°C
Units
Typ
Max
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
0.3
0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
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