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参数资料
| 型号： | NP110N055PUJ-E2B-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V MP-25ZP/TO-263 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.4 毫欧 @ 55A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 230nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 14250pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263 |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N055PUJ
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP110N055PUJ-E1B-AY
Note
LEAD PLATING
PACKING
PACKAGE
NP110N055PUJ-E2B-AY
Note
Pure Sn (Tin)
Tape 1000 p/reel
TO-263 (MP-25ZP) typ. 1.5 g
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
? Super low on-state resistance
R DS(on) = 2.4 m Ω MAX. (V GS = 10 V, I D = 55 A)
? Low input capacitance
C iss = 9500 pF TYP.
? Designed for automotive application and AEC-Q101 qualified
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
(TO-263)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
55
± 20
± 110
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 440
A
Total Power Dissipation (T C = 25 ° C)
Total Power Dissipation (T A = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
288
1.8
175
? 55 to + 175
W
W
° C
° C
Single Avalanche Energy
Note2
E AS
435
mJ
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note3
Note3
I AR
E AR
66
435
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Starting T ch = 25 ° C, V DD = 28 V, R G = 25 Ω , V GS = 20 → 0 V, L = 100 μ H
3. T ch ≤ 150 ° C, R G = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
0.52
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19731EJ1V0DS00 (1st edition)
Date Published April 2009 NS
Printed in Japan
2009
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NP110N055PUK | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| NP110N055PUK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 55V 110A TO-263 |
| NP111-273K | 制造商:YAMAICHI 功能描述: 制造商:Yamaichi Electronics 功能描述: |
| NP112 | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, BR |
| NP112AL | 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, AL |
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